SBASAI5E May   2023  – April 2026 TMAG5253

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics (Bipolar, TMAG5253BAx)
    6. 6.6  Magnetic Characteristics (Bipolar, TMAG5253BAx)
    7. 6.7  Electrical Characteristics (Unipolar, TMAG5253UAx)
    8. 6.8  Magnetic Characteristics (Unipolar, TMAG5253UAx)
    9. 6.9  Typical Characteristics (Bipolar, TMAG5253BAx)
    10. 6.10 Typical Characteristics (Unipolar, TMAG5253UAx)
  8. 7 Parameter Measurement Information
    1. 7.1 Sensitivity Linearity
    2. 7.2 Ratiometric Architecture
    3. 7.3 Sensitivity Temperature Compensation
    4. 7.4 Quiescent Voltage Temperature Drift
    5. 7.5 Power-On Time
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Magnetic Flux Direction
      2. 8.3.2 Hall Element Location
      3. 8.3.3 Magnetic Response
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Selecting the Sensitivity Option
      2. 9.1.2 Temperature Compensation for Magnets
      3. 9.1.3 Adding a Low-Pass Filter
      4. 9.1.4 Designing With Multiple Sensors
      5. 9.1.5 Duty-Cycled, Low-Power Design
    2. 9.2 Typical Applications
      1. 9.2.1 Slide-By Displacement Sensing
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Head-On Displacement Sensing
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
      3. 9.2.3 Remote-Sensing Applications
    3. 9.3 Best Design Practices
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.3.3 Magnetic Response

Figure 8-4 shows the response of the bipolar device option (B), which is sensitive to both the positive and negative magnetic fields. Figure 8-5 shows the response of the bipolar device option (U), which is sensitive to only the positive magnetic fields.

TMAG5253 Magnetic Response for TMAG5253B (Bipolar) VersionFigure 8-4 Magnetic Response for TMAG5253B (Bipolar) Version
TMAG5253 Magnetic Response for TMAG5253U (Unipolar) VersionFigure 8-5 Magnetic Response for TMAG5253U (Unipolar) Version

At room temperature, use Equation 10 to calculate the ideal first-order transfer function of the TMAG5253, where the output voltage is a linear function of the input magnetic field and the supply voltage.

Equation 10. VOUT=VQ+B × Sensitivity × VCCVCC,NOM

where

  • VQ is the quiescent output voltage for a field of 0mT.

    • VQ = VCC /2 for Bipolar device option (B)
    • VQ = 0.2V for unipolar device option (U)
  • B is the applied magnetic flux density
  • Sensitivity refers to the magnetic sensitivity of the device
  • VOUT is the analog output voltage within the VL range
  • VCC refers to the supply voltage of the device
  • VCC,NOM is the nominal supply voltage where the sensitivity is defined, such as 1.8V or 3.3V

As an example, consider the TMAG5253BA3, a bipolar magnetic response version with a sensitivity of 15mV/mT at 3.3V supply voltage and at room temperature. With VCC = 3.4V and an input field of 67mT, you can calculate the output voltage, VOUT for this example.

Equation 11. V O U T = 1.7 V + 67 m T   ×   0.015   V m T   ×   3.4 V 3.3 V   =   2.735 V