SBASAS5 October   2025 AMC0100R

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information (DEN Package)
    5. 5.5 Package Characteristics
    6. 5.6 Electrical Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Timing Diagram
    9. 5.9 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Analog Input
      2. 6.3.2 Isolation Channel Signal Transmission
      3. 6.3.3 Analog Output
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Shunt Resistor Sizing
        2. 7.2.2.2 Input Filter Design
        3. 7.2.2.3 Designing the Bootstrap Supply
        4. 7.2.2.4 Connecting the REFIN Pin
      3. 7.2.3 Application Curves
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.6 Electrical Characteristics

minimum and maximum specifications apply from TA = –40°C to +125°C, VDD1 = 3.0V to 5.5V, VDD2 = 3.0V to 5.5V, VREFIN = 3.3V, VINP = –250mV to +250mV, and VINN = 0V; typical specifications are at TA = 25°C, VDD1 = 5V, VDD2 = 3.3V, and VREFIN = 1.65V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
CIN Effective input sampling capacitance 1.8 pF
RIN Input impedance 25 27.5 30 kΩ
IINP Input current VIN = (VINP – VINN) = VFSR, MAX 9 μA
IINN Input current VIN = (VINP – VINN) = VFSR, MAX –9 μA
CMTI Common-mode transient immunity |GND1 – GND2| = 1kV 150 V/ns
REFERENCE INPUT
RREFIN Input Impedance REFIN to GND2, VREFIN = 3.3V, TA = 25℃ 65.3 76.8 88.3 kΩ
REFIN to GND2, VREFIN = 5V, TA = 25℃ 62 72.9 83.9
TCRREFIN Input Impedance thermal drift –235 ppm/℃
ANALOG OUTPUT
Nominal Gain VREFIN / 2 / |VClipping| V/V
ROUT Output resistance <0.2 Ω
Output short-circuit current OUT pin, sourcing or sinking,
INN = INP = GND1 or VDD1, output shorted to
either GND2 or VDD2		 11 mA
DC ACCURACY
VOS Offset voltage(1)(2) TA = 25°C, INP = INN = GND1 –0.25 ±0.01 0.25 mV
TCVOS Offset drift(1)(2)(4) –3.5 –1.8 1 µV/°C
EG Gain error(1) TA = 25°C –0.25% ±0.04 0.25%
TCEG Gain drift(1)(5) –35 ±5 35 ppm/°C
Nonlinearity(1) –0.04% 0.04%
Output noise INP = INN = GND1, fIN = 0Hz,
BW = 100kHz brickwall filter		 260 µVRMS
CMRR Common-mode rejection ratio fIN = 0Hz, VCM min ≤ VCM ≤ VCM max –100 dB
fIN = 10kHz, VCM min ≤ VCM ≤ VCM max –82
PSRR Power-supply rejection ratio(2) VDD1 DC PSRR, INP = INN = GND1,
VDD1 from 3V to 5.5V		 –89 dB
VDD1 AC PSRR, INP = INN = GND1,
VDD1 with 10kHz / 100mV ripple		 –81
VDD2 DC PSRR, INP = INN = GND1,
VDD2 from 3.3V to 5.5V		 –110
VDD2 AC PSRR, INP = INN = GND1,
VDD2 with 10kHz / 100mV ripple		 –82
AC ACCURACY
BW Output bandwidth 250 280 kHz
THD Total harmonic distortion(3) fIN = 10kHz –80 dB
SNR Signal-to-noise ratio fIN = 1 kHz, BW = 10kHz 84 dB
Signal-to-noise ratio fIN = 10kHz, BW = 100kHz 77
POWER SUPPLY
IDD1 High-side supply current 5.4 6.7 mA
IDD2 Low-side supply current 5.0 7.6 mA
VDD1UV High-side undervoltage detection threshold VDD1 rising 2.5 2.6 2.7 V
VDD1 falling  1.9 2.0 2.1
VDD2UV Low-side undervoltage detection threshold VDD2 rising 2.3 2.5 2.7 V
VDD2 falling 1.9 2.05 2.2
(1) The typical value includes one standard deviation (sigma) at nominal operating conditions.
(2) This parameter is input referred.
(3) THD is the ratio of the rms sum of the amplitues of first five higher harmonics to the amplitude of the fundamental.
(4) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCVOS = (VOS,MAX - VOS,MIN) / TempRange where VOS,MAX and VOS,MIN refer to the maximum and minimum VOS values measured within the temperature range (–40 to 125℃).
(5) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = ((EG,MAX - EG,MIN) / TempRange) x 104 where EG,MAX and EG,MIN refer to the maximum and minimum EG values (in %) measured within the temperature range (–40 to 125℃).