SBOS622D July 2018 – May 2025 OPA855
PRODUCTION DATA
The OPA855 is fabricated on a low-voltage, high-speed, BiCMOS process. The internal, junction breakdown voltages are low for these small geometry devices, and as a result, all device pins are protected with internal ESD protection diodes to the power supplies as Figure 8-3 shows. There are two anti-parallel diodes between the inputs of the amplifier that clamp the inputs during an over-range or fault condition.