SBOS729B October   2015  – October 2025 DRV425

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Fluxgate Sensor Front-End
        1. 6.3.1.1 Fluxgate Sensor
        2. 6.3.1.2 Bandwidth
        3. 6.3.1.3 Differential Driver for the Internal Compensation Coil
        4. 6.3.1.4 Magnetic Field Range, Overrange Indicator, and Error Flag
      2. 6.3.2 Shunt-Sense Amplifier
      3. 6.3.3 Voltage Reference
      4. 6.3.4 Low-Power Operation
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Linear Position Sensing
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Current Sensing in Busbars
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Power Supply Decoupling
      2. 7.3.2 Power-On Start-Up and Brownout
      3. 7.3.3 Power Dissipation
        1. 7.3.3.1 Thermal Pad
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Receiving Notification of Documentation Updates
    5. 8.5 Support Resources
    6. 8.6 Trademarks
    7. 8.7 Electrostatic Discharge Caution
    8. 8.8 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

8.7 Electrostatic Discharge Caution

DRV425 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.