SBVS466 November   2025 TPS7N49

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Enable and Shutdown
      2. 6.3.2 Active Discharge
      3. 6.3.3 Power-Good Output (PG)
      4. 6.3.4 Internal Current Limit
      5. 6.3.5 Thermal Shutdown Protection (TSD)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Input, Output, and Bias Capacitor Requirements
      2. 7.1.2 Dropout Voltage
      3. 7.1.3 Output Noise
      4. 7.1.4 Estimating Junction Temperature
      5. 7.1.5 Soft-Start, Sequencing, and Inrush Current
      6. 7.1.6 Power-Good Operation
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Board Layout
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

7.1.2 Dropout Voltage

The TPS7N49 offers very low dropout performance, making the device designed for high-current, low VIN and low VOUT applications. The low dropout allows the device to be used in place of a dc/dc converter and still achieve good efficiency. Equation 4 provides a quick estimate of the efficiency.

Equation 4. E f f i c i e n c y ≅ V O U T × I O U T V I N × I I N + I Q ≅ V O U T V I N a t   I O U T ≫ I Q

This efficiency provides designers with the power architecture for applications to achieve the smallest, simplest, and lowest cost design.

For this architecture, there are two different specifications for dropout voltage. The first specification (see Figure 5-16) is referred to as VIN dropout and is used when an external bias voltage is applied to achieve low dropout. This specification assumes that VBIAS is at least 2.8V above VOUT. This assumption is valid when VBIAS is powered by a 5.0V rail with a 5% tolerance and with VOUT = 1.5V. If VBIAS is higher than VOUT + 2.8V, the VIN dropout is less than specified.

Note: 2.8V is a test condition of this device and is adjusted by referring to the Electrical Characteristics table.

The second specification (illustrated in Figure 5-17 ) is referred to as VBIAS dropout and applies to applications where IN and BIAS are tied together. This option allows the device to be used in applications where an auxiliary bias voltage is not available or low dropout is not required. Dropout is limited by BIAS in these applications because VBIAS provides the gate drive to the pass transistor; therefore, verify VBIAS is 1.9V above VOUT. Because of this usage, having IN and BIAS tied together becomes a highly inefficient design that consumes large amounts of power. Pay attention not to exceed the power rating of the device package.