SBVS466 November   2025 TPS7N49

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Enable and Shutdown
      2. 6.3.2 Active Discharge
      3. 6.3.3 Power-Good Output (PG)
      4. 6.3.4 Internal Current Limit
      5. 6.3.5 Thermal Shutdown Protection (TSD)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Input, Output, and Bias Capacitor Requirements
      2. 7.1.2 Dropout Voltage
      3. 7.1.3 Output Noise
      4. 7.1.4 Estimating Junction Temperature
      5. 7.1.5 Soft-Start, Sequencing, and Inrush Current
      6. 7.1.6 Power-Good Operation
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Board Layout
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.4.1 Normal Operation

The device regulates to the nominal output voltage when the following conditions are met:

  • The input voltage is greater than the nominal output voltage plus the dropout voltage (VOUT(nom) + VDO(IN))
  • The bias voltage is greater than the nominal output voltage plus the dropout voltage (VOUT(nom) + VDO(BIAS))
  • The output current is less than the current limit (IOUT < ICL)
  • The device junction temperature is less than the thermal shutdown temperature ( TJ < TSD(shutdown))
  • The enable voltage has previously exceeded the enable rising threshold voltage and has not yet decreased to less than the enable falling threshold