SBVS477A May   2025  – July 2025 TPS7B4259-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information 
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Tracker Output Voltage (VOUT)
        1. 6.3.1.1 Output Voltage Equal to Reference Voltage
        2. 6.3.1.2 Output Voltage Less Than the Reference Voltage
      2. 6.3.2 Reverse Current Protection
      3. 6.3.3 Power Good
      4. 6.3.4 Undervoltage Lockout
      5. 6.3.5 Thermal Protection
      6. 6.3.6 Current Limit
      7. 6.3.7 Output Short to Battery
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Operation With VIN < 3.3V
      4. 6.4.4 Disable With ADJ and EN Controls
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Dropout Voltage
      2. 7.1.2 Reverse Current
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input and Output Capacitor Selection
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Package Mounting
        2. 7.4.1.2 Board Layout Recommendations to Improve PSRR and Noise Performance
        3. 7.4.1.3 Power Dissipation and Thermal Considerations
        4. 7.4.1.4 Thermal Performance Versus Copper Area
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

specified at TJ = –40°C to +150°C, VIN = 13.5V, IOUT = 100µA, COUT = 1µF, CIN = 1µF, VEN = 2V and VADJ = 5V (unless otherwise noted); typical values are at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IQ Quiescent current VIN = 5.4V to 40V, IOUT = 100µA, TJ = 25ºC 75 µA
VIN = 5.4V to 40V, IOUT = 100µA, –40ºC < TJ < 85ºC 80
VIN = 5.4V to 40V, IOUT = 100µA 85
IGND Ground current  VIN = 5.8V to 40V, IOUT = 150mA 2 mA
ISHUTDOWN Shutdown supply current  VEN = 0V 3.8 µA
IADJ ADJ pin current  IOUT = 100µA 0.9 µA
VUVLO (RISING) Rising input supply UVLO VIN rising, IOUT = 5mA 2.6 2.7 2.85 V
VUVLO (FALLING) Falling input supply UVLO VIN falling, IOUT = 5mA 2.3 2.4 2.5 V
VUVLO (HYST) VUVLO(IN) hysteresis 300 mV
ΔVOUT Output voltage tracking accuracy  VIN = VOUT + 0.8V to 40V, IOUT = 100µA to 150mA (1) –6 6 mV
ΔVOUT (ΔVIN) Line regulation VIN = VOUT + 0.8V to 40V, IOUT = 100µA –0.4 0.4 mV
ΔVOUT (ΔIOUT) Load regulation  VIN = VOUT + 0.8V, IOUT = 100µA to 150mA (1) 1 mV
VDO Dropout voltage  IOUT = 150mA, VADJ ≥ 3.3V, VIN = VADJ 250 470 mV
ICL Output current limit  VIN = VOUT + 1.2V, VOUT short to 90% x VADJ 170 215 250 mA
VPG UV-TH Power-good undervoltage threshold, VADJ - VOUT VOUT decreasing, VIN = VADJ = 5V, VIN reducing 40 80 120 mV
VPG OV-TH Power-good overvoltage threshold, VOUT - VADJ VOUT increasing,  VIN ≥ VADJ/REF + 0.5V 40 80 120 mV
VPG-HYST Power-good hysteresis 25 mV
tPG Power-good reaction time 20 50 80 µS
VPG, LOW Power-good output low voltage IPG = 1.8mA 0.4 V
IPG, LEAKAGE Power-good pin leakage current VPG = 5V 0.25 µA
VEN, OFF Device disable voltage range  0.8 V
VEN, ON Device enable voltage range 1.8 V
IEN Enable pin leakage current VEN = 5V 1 µA
PSRR Power-supply ripple rejection VRIPPLE = 1VPP, frequency = 100Hz, IOUT ≥ 5mA 80 dB
Vn Output noise voltage VOUT = 3.3V, IOUT = 1mA, BW = 10Hz to 100KHz, a 5µVRMS reference is used for this measurement 150 µVRMS
IREV Reverse current at VIN VIN = 0V, VOUT = 32V –0.7 0.7 µA
IREV-N1 Reverse current at negative VIN VIN = –20V, VOUT = 20V –1.2 1.2 µA
TSD(SHUTDOWN) Junction shutdown temperature 175 °C
TSD(HYST) Hysteresis of thermal shutdown 15 °C
(1) Because the power dissipation is potentially large, this specification is measured using pulse testing with a low duty cycle. See the thermal information table for more information on how much power the device dissipates while maintaining a junction temperature below 150℃.