SCASE80 September   2025 TPUL2T323-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Characteristics
    7.     13
    8. 5.7 Switching Characteristics
    9. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Naming Convention
      2. 7.3.2 Retriggerable One-Shot
      3. 7.3.3 Extended RC Timed One-Shot
      4. 7.3.4 Balanced CMOS Push-Pull Outputs
      5. 7.3.5 CMOS Schmitt-Trigger Inputs
      6. 7.3.6 Latching Logic with Known Power-Up State
      7. 7.3.7 Partial Power Down (Ioff)
      8. 7.3.8 Reduced Input Threshold Voltages
      9. 7.3.9 Clamp Diode Structure
    4. 7.4 Device Functional Modes
      1. 7.4.1 Off-State Operation
      2. 7.4.2 Startup Operation
      3. 7.4.3 On-State Operation
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application - Edge Detector
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Timing Components
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
        4. 8.2.1.4 Power Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Typical Application - Delayed Pulse Generator
      1. 8.3.1 Application Curves
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

Over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VT+ Positive switching threshold 1.5V 0.75 0.90 0.99 V
1.8V 0.86 1.03 1.17
2.5V 1.1 1.29 1.47
3.3V 1.37 1.56 1.76
5V 1.92 2.16 2.4
5.5V 2.08 2.33 2.6
VT- Negative switching threshold 1.5V 0.41 0.47 0.54 V
1.8V 0.48 0.53 0.6
2.5V 0.63 0.69 0.76
3.3V 0.8 0.87 0.96
5V 1.13 1.25 1.39
5.5V 1.22 1.36 1.51
ΔVT Hysteresis (VT+ - VT-) 1.5V 0.34 0.45 0.6 V
1.8V 0.38 0.5 0.66
2.5V 0.47 0.6 0.78
3.3V 0.56 0.69 0.89
5V 0.77 0.9 1.12
5.5V 0.83 0.96 1.2
VOH High-level output voltage IOH = -50µA 1.5V - 5.5V VCC – 0.1 VCC – 0.01 V
IOH = -1mA 1.65V 1.2 1.61
IOH = -2mA 2.3V 2.1 2.24
IOH = -8mA 3V 2.4 2.78
IOH = -12mA 4.5V 3.94 4.21
IOH = -12mA 5.5V 4.94 5.23 V
VOL Low-level output voltage IOL = 50µA 1.5V - 5.5V 0.01 0.1 V
IOL = 1mA 1.65V 0.03 0.45
IOL = 2mA 2.3V 0.04 0.2
IOL = 8mA 3V 0.13 0.4
IOL = 12mA 4.5V 0.15 0.5
IOL = 12mA 5.5V 0.13 0.5
II Input leakage current VI = 5.5V or 0V 0V to 5.5V ±50 nA
ICEXT Capacitor pin current Monitor state, VCEXT = 0.5 × VCC 1.5V to 5.5V ±50 nA
ICEXT Capacitor pin current Active state, discharging, VCEXT = 1.5V 1.5V 11 mA
Active state, discharging, VCEXT = 2.3V 2.3V 29 mA
Active state, discharging, VCEXT = 3V 3V 45 mA
Active state, discharging, VCEXT = 4.5V 4.5V 95 mA
Active state, discharging, VCEXT = 5.5V 5.5V 138 mA
Ioff Partial power-off current VI or VO = 5.5V or 0V 0V to 0.3V 0.25 10 µA
ICC Supply current Ready state, VI = VCC or 0V, IO = 0 5.5V 0.19 2 µA
ΔICC Supply-current change One input, Vi = 0 to VCC, all other inputs at VCC or 0V, IO = 0mA 1.5V to 5.5V 1.5 mA
CI Input capacitance VI = 5.5V or 0V 5.5V 1 pF
CO Output capacitance VO = 5.5V or 0V 0V 3 pF
Cint Internal capacitance Cext = 0pF; Vcext = 0 to VCC 1.5V 16 17.9 20 pF
1.65V 14 15.5 17
2.3V 7 9.7 13
3V 6 9.9 14
4.5V 5 7.7 10
5.5V 4 5.7 7