SCES643K November   2006  – July 2025 TXB0108

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics (DGS/RUK/RKS)
    6. 5.6  Electrical Characteristics (Other Packages)
    7. 5.7  Timing Requirements: VCCA = 1.2V
    8. 5.8  Timing Requirements: VCCA = 1.5V ± 0.1V
    9. 5.9  Timing Requirements: VCCA = 1.8V ± 0.15V
    10. 5.10 Timing Requirements: VCCA = 2.5V ± 0.2V
    11. 5.11 Timing Requirements: VCCA = 3.3V ± 0.3V
    12. 5.12 Switching Characteristics: VCCA = 1.2V (DGS/RUK/RKS)
    13. 5.13 Switching Characteristics: VCCA = 1.2V (Other Packages)
    14. 5.14 Switching Characteristics: VCCA = 1.5V ± 0.1V (DGS/RUK/RKS)
    15. 5.15 Switching Characteristics: VCCA = 1.5V ± 0.1V (Other Packages)
    16. 5.16 Switching Characteristics: VCCA = 1.8V ± 0.15V (DGS/RUK/RKS)
    17. 5.17 Switching Characteristics: VCCA = 1.8V ± 0.15V (Other Packages)
    18. 5.18 Switching Characteristics: VCCA = 2.5V ± 0.2V (DGS/RUK/RKS)
    19. 5.19 Switching Characteristics: VCCA = 2.5V ± 0.2V (Other Packages)
    20. 5.20 Switching Characteristics: VCCA = 3.3V ± 0.3V (DGS/RUK/RKS)
    21. 5.21 Switching Characteristics: VCCA = 3.3V ± 0.3V (Other Packages)
    22. 5.22 Operating Characteristics
    23. 5.23 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Architecture
      2. 7.3.2 Input Driver Requirements
      3. 7.3.3 Output Load Considerations
      4. 7.3.4 Enable and Disable
      5. 7.3.5 Pullup or Pulldown Resistors on I/O Lines
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

7.3.1 Architecture

The TXB0108 architecture (see Figure 7-1) does not require a direction-control signal to control the direction of data flow from A to B or from B to A. In a dc state, the output drivers of the TXB0108 can maintain a high or low, but are designed to be weak so that they can be overdriven by an external driver when data on the bus starts flowing the opposite direction. The output one-shots detect rising or falling edges on the A or B ports. During a rising edge, the one-shot turns on the PMOS transistors (T1, T3) for a short duration, which speeds up the low-to-high transition. Similarly, during a falling edge, the one-shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up the high-to-low transition. The typical output impedance during output transition is 70Ω at VCCO = 1.2V to 1.8V, 50Ω at VCCO = 1.8V to 3.3V and 40Ω at VCCO = 3.3V to 5V.

TXB0108 Architecture of TXB0108 I/O CellFigure 7-1 Architecture of TXB0108 I/O Cell