SCES749D September   2009  – June 2025 SN74AUP2G14

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics
    7. 5.7  Switching Characteristics
    8. 5.8  Switching Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Operating Characteristics
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delays, Setup and Hold Times, and Pulse Width
    2. 6.2 Enable and Disable Times
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

1 Features

  • Available in the Texas Instruments NanoStar™ package
  • Low static-power consumption
    (ICC = 0.9μA maximum)
  • Low dynamic-power consumption
    (Cpd = 4.3pF typical at 3.3V)
  • Low input capacitance (Ci = 1.5pF typical)
  • Low noise – overshoot and undershoot
    <10% of VCC
  • Ioff supports partial-power-down mode operation
  • Wide operating VCC range of 0.8V to 3.6V
  • Optimized for 3.3V operation
  • 3.6V I/O tolerant to support mixed-mode signal Operation
  • tpd = 4.3ns maximum at 3.3V
  • Suitable for point-to-point applications
  • Latch-up performance exceeds 100mA Per JESD 78, Class II
  • ESD performance tested per JESD 22
    • 2000V human-body model
      (A114-B, Class II)
    • 1000V charged-device model (C101)