SCLS239P October   1995  – July 2025 SN54AHCT373 , SN74AHCT373

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5.   5
  6. 4 Pin Configuration and Functions
  7. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Timing Requirements, VCC = 5V ±0.5V
    7. 5.7  Switching Characteristics, VCC = 5V ±0.5V
    8. 5.8  Noise Characteristics
    9. 5.9  Operating Characteristics
    10. 5.10 Typical Characteristics
  8. 6 Parameter Measurement Information
  9. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS 3-State Outputs
      2. 7.3.2 TTL-Compatible CMOS Inputs
      3. 7.3.3 Clamp Diode Structure
    4. 7.4 Device Functional Modes
  10. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  11. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  12. 10Revision History
  13. 11Mechanical, Packaging, and Orderable Information

5.6 Timing Requirements, VCC = 5V ±0.5V

over recommended operating free-air temperature range (unless otherwise noted) (see Parameter Measurement Information)
PARAMETER TA = 25°C SN54AHCT373 SN74AHCT373 UNIT
MIN MAX MIN MAX MIN MAX
tw Pulse duration, LE high 6.5 6.5 6.5 ns
tsu Setup time, data before LE↓ 1.5 1.5 1.5 ns
th Hold time, data after LE↓ 3.5 3.5 3.5 ns