Efficiency measurements are repeated at different temperatures than +25⁰C ambient temperature, namely +85⁰C and -35⁰C. Results for configurations 'Resistor' and 'Analog' are shown in Figure 4-10 and Figure 4-11, respectively. As expected, the overall efficiency at higher temperatures gets worse, while the efficiency at lower temperatures is comparable to the efficiency at ambient temperature.

In order to check heat dissipation of the board, the device is left running with 5A load for 10 minutes, and infra-red pictures of the evaluation board are taken, in both configurations 'Resistor' and 'Analog'. The infra-red shots are shown in Figure 4-12 and Figure 4-13. Note how at lower output power (configuration 'Resistor') the diodes are getting hotter than the low-side FETs (because of higher conduction losses), while it is the other way around in the second case (when the output voltage is higher), as the duty cycle increases and the low-side FETs stay on for longer (hence having higher conduction losses than the diodes). Overall, as you can see from the images, the heat production is mostly coming from the diodes and the low-side FETs, while the IC is always in the yellow to orange area.