SDAA444 October 2026 UCC23711
A positive VGE of typically 15 V is used to switch the IGBT well into saturation. For low power IGBTs, the Miller clamp functionality of the gate driver enables it to be operated with unipolar voltage (VEE connected to COM). For higher power IGBTs, negative values of VGE such as -8V as used in the design are used to keep the IGBT turned off and to prevent it from unintentional conducting due to noise transients, particularly during short circuit faults.
100nF caps C10, C6 and C8 are placed close to VDD-VEE, VDD-COM and VEE-COM to filter out high frequency noise.
The capacitors C5 and C7 are chosen to 2.2μF 50V, intentionally lower than the recommended 10μF 50V MLCC capacitors per UCC23711 datasheet. The reason is that the gate charge of the selected IGBT (U1) is rather low 0.3µC along with a maximum desired PWM switching frequency of 16kHz. The minimum capacitance of C5 (X7R, 0805) assuming a negative 10% tolerance and 15V DC bias is around 1.2µF, for C7 (X7R, 0805) at -8V DC bias the minimum capacitance is around 1.7µF. The maximum voltage drop across C5 is 0.25V (15V bias) and 0.17V (-8V bias) for C7, which is around 2% and within the tolerances of the 15V and -8V supply. For IGBTs with higher gate charges and tighter tolerances increase the decoupling capacitors respectively.