SLAAEB4 april   2023 MSPM0C1105 , MSPM0C1106 , MSPM0G1105 , MSPM0G1106 , MSPM0G1107 , MSPM0G1505 , MSPM0G1506 , MSPM0G1507 , MSPM0G1518 , MSPM0G1519 , MSPM0G3105 , MSPM0G3106 , MSPM0G3106-Q1 , MSPM0G3107 , MSPM0G3107-Q1 , MSPM0G3505 , MSPM0G3506 , MSPM0G3506-Q1 , MSPM0G3507 , MSPM0G3507-Q1 , MSPM0G3518 , MSPM0G3518-Q1 , MSPM0G3519 , MSPM0G3519-Q1 , MSPM0H3216 , MSPM0L1105 , MSPM0L1106 , MSPM0L1303 , MSPM0L1304 , MSPM0L1304-Q1 , MSPM0L1305-Q1 , MSPM0L1306 , MSPM0L1306-Q1 , MSPM0L1343 , MSPM0L1344 , MSPM0L1345 , MSPM0L1346

 

  1.   Abstract
  2.   Trademarks
  3. 1Introduction
    1. 1.1 Difference Between EEPROM and On-Chip Flash
  4. 2Implementation
    1. 2.1 Principle
    2. 2.2 Header
  5. 3Software Description
    1. 3.1 Software Functionality and Flow
    2. 3.2 EEPROM Functions
      1. 3.2.1 Global Variables
      2. 3.2.2 EEPROM_TypeB_readDataItem
      3. 3.2.3 EEPROM_TypeB_findDataItem
      4. 3.2.4 EEPROM_TypeB_write
      5. 3.2.5 EEPROM_TypeB_transferDataItem
      6. 3.2.6 EEPROM_TypeB_eraseGroup
      7. 3.2.7 EEPROM_TypeB_init
    3. 3.3 Application Integration
    4. 3.4 EEPROM Emulation Memory Footprint
    5. 3.5 EEPROM Emulation Timing
  6. 4Application Aspects
    1. 4.1 Selection of Configurable Parameters
      1. 4.1.1 Number of Data Items
      2. 4.1.2 Cycling Capability
    2. 4.2 Recovery in Case of Power Loss
  7. 5References

3.5 EEPROM Emulation Timing

This section describes the timing parameters associated with the EEPROM emulation driver based on four 1-Kbyte Flash sectors. All timing measurements are performed:

  • MSPM0G3507
  • System clock at 32 MHz
  • With execution from Flash
  • At room temperature

The functions are test at the parameters:

  • Number of groups: 2
  • Number of sectors in one group: 2
  • Sector address: 0x00001000
Table 3-2 Timings of EEPROM Emulation Operations.
Operation Minimum Typical Maximum
EEPROM_TypeB_readDataItem 2.2us 89.4 us
EEPROM_TypeB_init with active group 4.65ms 61.38 ms
EEPROM_TypeB_init without active group 4.26 ms
EEPROM_TypeB_write without transfer 109.5 us
EEPROM_TypeB_write with transfer 630.8 us 39.09ms
EEPROM_TypeB_eraseGroup 12.2 ms