SLAAED5 june   2023 AFE11612-SEP , INA240-SEP , OPA4H199-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 LDMOS and GaN Power Amplifier FET PA Basics
  5. 2 VGS Compensation
  6. 3 Sequencing
  7. 4 An Integrated PA Biasing Solution
  8. 5 Negative GaN Biasing
  9. 6 VDRAIN Switching Circuit
  10. 7 Controlled Gate Sequencing Circuit
  11. 8 VDRAIN Monitoring
  12. 9 IDQ Monitoring
  13. 10External Negative Power Supply Monitoring
  14. 11PA Temperature Monitoring
  15. 12Summary
  16. 13References

12 Summary

Power amplifier behavioral nuances make discrete VGS compensation solutions complex and costly. The AFE11612-SEP simplifies the solution while adding beneficial features, such as gate monitoring, VDRAIN monitoring, temperature monitoring, and supply collapse detection for startup and shutdown sequence control, to make the device an excellent value.

Table 12-1 Device Recommendations
Device Optimized Parameters Total Ionizing Dose (TID) Characterized Single Event Latch-Up (SEL) Characterized
AFE11612-SEP Space enhanced 12 12-bit DACs with 16 12-bit ADC inputs. 20 krad(SI) Immune to 43 MeV-cm2/mg at 125°C
OPA4H199-SEP Space enhanced high voltage quad-output operational amplifier. 30 krad(SI) Immune to 43 MeV-cm2 /mg at 125°C
INA240-SEP Space enhanced wide common-mode range current sense amplifier. 20 krad(SI) Immune to 43 MeV-cm2 /mg at 125°C