SLFS022J September   1973  – February 2025 NA555 , NE555 , SA555 , SE555 , SE555M

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Monostable Operation
      2. 6.3.2 Astable Operation
      3. 6.3.3 Frequency Divider
    4. 6.4 Device Functional Modes
  8. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Missing-Pulse Detector
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Pulse-Width Modulation
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Application Curve
      3. 7.2.3 Pulse-Position Modulation
        1. 7.2.3.1 Design Requirements
        2. 7.2.3.2 Detailed Design Procedure
        3. 7.2.3.3 Application Curve
      4. 7.2.4 Sequential Timer
        1. 7.2.4.1 Design Requirements
        2. 7.2.4.2 Detailed Design Procedure
        3. 7.2.4.3 Application Curve
    3. 7.3 Power Supply Recommendations
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

8.4 Electrostatic Discharge Caution

NA555 NE555 SA555 SE555 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.