SLLSF86D May   2018  – August 2026 ISOW1412 , ISOW1432

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Supply Current Characteristics at VISOOUT = 3.3 V
    11. 6.11 Supply Current Characteristics at  VISOOUT = 5 V
    12. 6.12 Switching Characteristics at VISOOUT = 3.3 V
    13. 6.13 Switching Characteristics at VISOOUT = 5 V
    14. 6.14 Insulation Characteristics Curves
    15. 6.15 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Power Isolation
    3. 8.3 Signal Isolation
    4. 8.4 RS-485
    5. 8.5 Functional Block Diagram
    6. 8.6 Feature Description
      1. 8.6.1 Power-Up and Power-Down Behavior
      2. 8.6.2 Protection Features
      3. 8.6.3 Failsafe Receiver
      4. 8.6.4 Glitch-Free Power Up and Power Down
    7. 8.7 Device Functional Modes
    8. 8.8 Device I/O Schematics
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Data Rate, Bus Length and Bus Loading
        2. 9.2.2.2 Stub Length
      3. 9.2.3 Insulation Lifetime
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Insulation Lifetime

Insulation lifetime projection data is collected by using industry-standard Time Dependent Dielectric Breakdown (TDDB) test method. In this test, all pins on each side of the barrier are tied together creating a two-terminal device and high voltage applied between the two sides as shown in below TDDB test setup. The insulation breakdown data is collected at various high voltages switching at 60Hz over temperature. For reinforced insulation, VDE standard requires the use of TDDB projection line with failure rate of less than 1 part per million (ppm). Even though the expected minimum insulation lifetime is 20 years at the specified working isolation voltage, VDE reinforced certification requires additional safety margin of 20% for working voltage and 50% for lifetime which translates into minimum required insulation lifetime of 30 years at a working voltage that is 20% higher than the specified value.  

ISOW1412 ISOW1432 Test Setup for Insulation
                    Lifetime Measurement Figure 9-5 Test Setup for Insulation Lifetime Measurement

The insulation lifetime projection data shows the intrinsic capability of the isolation barrier to withstand high voltage stress over the lifetime of the barrier. Based on the TDDB data, the intrinsic capability of the insulation is 1000VRMS with a lifetime of 1184 years.

ISOW1412 ISOW1432 Insulation Lifetime Projection
                    Data Figure 9-6 Insulation Lifetime Projection Data