SLLSG22A December   2024  – February 2025 ISO6520-Q1 , ISO6521-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Package Characteristics
    6. 5.6  Electrical Characteristics—5-V Supply
    7. 5.7  Supply Current Characteristics—5-V Supply
    8. 5.8  Electrical Characteristics—3.3-V Supply
    9. 5.9  Supply Current Characteristics—3.3-V Supply
    10. 5.10 Electrical Characteristics—2.5-V Supply 
    11. 5.11 Supply Current Characteristics—2.5-V Supply
    12. 5.12 Electrical Characteristics—1.8-V Supply
    13. 5.13 Supply Current Characteristics—1.8-V Supply
    14. 5.14 Switching Characteristics—5-V Supply
    15. 5.15 Switching Characteristics—3.3-V Supply
    16. 5.16 Switching Characteristics—2.5-V Supply
    17. 5.17 Switching Characteristics—1.8-V Supply
    18. 5.18 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device I/O Schematics
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 PCB Material
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

3 Description

The ISO652x-Q1 devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 450VRMS and transient over voltages of 1000VDC.

The ISO652x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI's double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520-Q1 has two isolation channels with both channels in the same direction. ISO6521-Q1 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent ground loops and noise currents between mixed voltage domain systems on data buses, such as CAN and LIN, from causing data corruption. Through chip design and layout techniques, the electromagnetic compatibility of the ISO652x-Q1 devices have been significantly enhanced to ease system-level ESD and emissions compliance.

Package Information
PART NUMBERPACKAGE (1)PACKAGE SIZE(2)
ISO6520-Q1, ISO6520F-Q1D

(SOIC, 8)

4.9mm × 6.0mm
ISO6521-Q1, ISO6521F-Q1
(1) For all available packages, see the orderable addendum at the end of the data sheet.
(2) The package size (length × width) is a nominal value and includes pins, where applicable.