SLUSAM9E July   2011  – April 2020 BQ76925

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Description (Continued)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: Supply Current
    6. 7.6  Internal Power Control (Startup and Shutdown)
    7. 7.7  3.3-V Voltage Regulator
    8. 7.8  Voltage Reference
    9. 7.9  Cell Voltage Amplifier
    10. 7.10 Current Sense Amplifier
    11. 7.11 Overcurrent Comparator
    12. 7.12 Internal Temperature Measurement
    13. 7.13 Cell Balancing and Open Cell Detection
    14. 7.14 I2C Compatible Interface
    15. 7.15 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Internal LDO Voltage Regulator
      2. 8.3.2 ADC Interface
        1. 8.3.2.1 Reference Voltage
          1. 8.3.2.1.1 Host ADC Calibration
        2. 8.3.2.2 Cell Voltage Monitoring
          1. 8.3.2.2.1 Cell Amplifier Headroom Under Extreme Cell Imbalance
          2. 8.3.2.2.2 Cell Amplifier Headroom Under BAT Voltage Drop
        3. 8.3.2.3 Current Monitoring
        4. 8.3.2.4 Overcurrent Monitoring
        5. 8.3.2.5 Temperature Monitoring
          1. 8.3.2.5.1 Internal Temperature Monitoring
      3. 8.3.3 Cell Balancing and Open Cell Detection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Modes
        1. 8.4.1.1 POWER ON RESET (POR)
        2. 8.4.1.2 STANDBY
        3. 8.4.1.3 SLEEP
    5. 8.5 Programming
      1. 8.5.1 Host Interface
        1. 8.5.1.1 I2C Addressing
        2. 8.5.1.2 Bus Write Command to BQ76925
        3. 8.5.1.3 Bus Read Command from BQ76925 Device
    6. 8.6 Register Maps
      1. 8.6.1 Register Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Recommended System Implementation
        1. 9.1.1.1 Voltage, Current, and Temperature Outputs
        2. 9.1.1.2 Power Management
        3. 9.1.1.3 Low Dropout (LDO) Regulator
        4. 9.1.1.4 Input Filters
        5. 9.1.1.5 Output Filters
      2. 9.1.2 Cell Balancing
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

8.3.2.2 Cell Voltage Monitoring

The cell-voltage monitoring circuits include an input level-shifter, multiplexer (MUX), and scaling amplifier. The Host selects one VCn cell input for measurement by setting the VCOUT_SEL and CELL_SEL bits in the CELL_CTL register. The scaling factor is set by the REF_SEL bit in the CONFIG_2 register. The selected cell input is level shifted to VSS reference, scaled by a nominal gain GVCOUT = 0.3 (REF_SEL = 0) or 0.6 (REF_SEL = 1) and output on the VCOUT pin for measurement by the Host ADC.

Similar to the reference voltage, gain and offset correction factors are determined at final test for each individual cell input and stored in non-volatile registers VCn_CAL (n = 1-6) and VC_CAL_EXT_m (m = 1-2). These factors are read by the Host and applied to the ADC voltage-measurement results in order to obtain the specified accuracy.

The cell voltage offset and gain correction factors are stored as 5-bit signed integers in 2’s complement format. The most significant bits (VCn_OC_4, VCn_GC_4) are stored separately and must be concatenated with the least significant bits (VCn_OFFSET_CORR, VCn_GAIN_CORR).

The reference voltage offset and gain correction factors are stored respectively as a 6-bit and 5-bit signed integer in 2’s complement format. As with the cell voltage correction factors, the most significant bits (VREF_OC_5, VREF_OC_4, VREF_GC_4) are stored separately and must be concatenated with the least significant bits (VREF_OFFSET_CORR, VREF_GAIN_CORR).

The actual cell voltage (VCn) is calculated from the measured voltage (VCOUT) as shown in the following equations:

Equation 1. BQ76925 EQ1_vcn_lusam9.gif
Equation 2. BQ76925 EQ2_gcv_lusam9.gif