SLUSFG2C September 2024 – June 2025 TPS6286A06 , TPS6286A08 , TPS6286A10 , TPS6286B08 , TPS6286B10
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| IQ_VIN | Quiescent current | EN = High, no load, device not switching, TJ = 25℃ | 5.1 | 9 | µA | |
| IQ_OUT | Operating quiescent current into OUT pin | EN = High, no load, device not switching, VOUT = 1.8V, TJ = 25℃ | 18 | µA | ||
| ISD | Shutdown current | EN = Low, TJ = 25℃ |
0.24 | 0.75 | µA | |
| VUVLO | Undervoltage lock out threshold | VIN rising | 2.2 | 2.3 | 2.4 | V |
| VIN falling | 2.1 | 2.2 | 2.3 | V | ||
| TJSD | Thermal shutdown threshold | TJ rising | 150 | °C | ||
| Thermal shutdown hysteresis | TJ falling | 20 | °C | |||
| TJW | Thermal warning threshold | TJ rising | 130 | °C | ||
| Thermal warning hysteresis | TJ falling | 20 | °C | |||
| LOGIC INTERFACE | ||||||
| VIH | High-level input threshold voltage at EN, SCL, SDA and VSET/MODE | 0.9 | V | |||
| VIL | Low-level input threshold voltage at EN, SCL, SDA and VSET/MODE | 0.4 | V | |||
| ISCL,LKG | Input leakage current into SCL pin | TJ = 25℃ | 0.01 | 0.2 | µA | |
| ISDA,LKG | Input leakage current into SDA pin | TJ = 25℃ | 0.01 | 0.1 | µA | |
| IEN,LKG | Input leakage current into EN pin | TJ = 25℃ | 0.01 | 0.1 | µA | |
| CSCL | Parasictic capacitance at SCL | 1 | pF | |||
| CSDA | Parasictic capacitance at SDA | 2.4 | pF | |||
| STARTUP, POWER GOOD | ||||||
| tDelay | Enable delay time, TPS6286Axx | Time from EN high to device starts switching 249kΩ resistor connected between VSET/MODE and GND |
420 | 840 | 1200 | µs |
| tDelay | Enable delay time, TPS6286Bxx | Time from EN high to device starts switching | 100 | 660 | 1000 | µs |
| tRamp | Output voltage ramp time, TP6286A06 | Time from device starts switching to power good (no external capacitor connected) | 1 | 1.5 | 1.85 | ms |
| tRamp | Output voltage ramp time, TP6286A08, TPS6286A10, TPS6286B08, TPS6286B10 | Time from device starts switching to power good (no external capacitor connected) | 0.4 | 0.55 | 0.72 | ms |
| Iss | SS pin source current | 20 | µA | |||
| tPG,DLY | Power-good deglitch delay | Rising and falling edges | 34 | µs | ||
| VPG | Power-good lower threshold | VOUT referenced to VOUT nominal | 85 | 91 | 96 | % |
| Power-good upper threshold | VOUT referenced to VOUT nominal | 103 | 111 | 120 | % | |
| VPG,OL | Low-level output voltage | Isink = 1mA | 0.36 | V | ||
| IPG,LKG | Input leakage current into PG pin | VPG = 5.0V, TJ = 25℃ | 0.01 | 0.1 | µA | |
| OUTPUT | ||||||
| VOUT | Output voltage accuracy | Fixed voltage operation, FPWM, no load, TJ = 25°C | –0.7 | 0.7 | % | |
| VOUT | Output voltage accuracy | Fixed voltage operation, FPWM, no load | –1 | 1 | % | |
| VFB | Feedback voltage | Adjustable voltage operation, TJ = –40°C to 125°C | 594 | 600 | 606 | mV |
| IFB,LKG | Input leakage into FB pin | Adjustable voltage operation, VFB = 0.6V, TJ = 25℃ | 0.01 | 0.1 | µA | |
| RDIS | Output discharge resistor at OUT pin | 4.3 | Ω | |||
| Load regulation | VOUT = 0.9V, FPWM | 0.04 | %/A | |||
| POWER SWITCH | ||||||
| RDS(on) | High-side FET on-resistance | 8 | mΩ | |||
| Low-side FET on-resistance | 8 | mΩ | ||||
| ILIM | High-side FET forward current limit | TPS6286x06 | 7.3 | 8 | 9 | A |
| ILIM | High-side FET forward current limit | TPS6286x08 | 10 | 11 | 12 | A |
| ILIM | High-side FET forward current limit | TPS6286x10 | 13 | 14 | 15 | A |
| ILIM | Low-side FET forward current limit | TPS6286x06 | 6.5 | A | ||
| ILIM | Low-side FET forward current limit | TPS6286x08 | 9 | A | ||
| ILIM | Low-side FET forward current limit | TPS6286x10 | 12 | A | ||
| ILIM | Low-side FET negative current limit | TPS6286x06, TPS6286x08, TPS6286x10 | –3 | A | ||
| fSW | PWM switching frequency | IOUT = 1A, VOUT = 0.9V | 1.2 | MHz | ||