SLUUBT4B June 2018 ā June 2025 BQ40Z80
The EVM provides a power resistor and FET to support a reduced current precharge path to charge the pack when cell voltages are below the precharge voltage threshold. This reduces heating that can lead to cell damage or reduced operating lifetime. For a 7-series cell application, the FET must be rated above the max voltage, and, for this reason, the CSD18504Q5A was chosen. The TI CSD18504Q5A is a 50A, 40V device with Rds(on) of 5.3mĪ© when the gate drive voltage is 10V. The user can change R1 to setup the precharge current to a different value. R1 is calculated to limit the precharge current to the desired rate. Be sure to account for the power dissipation of the series resistor. The pre-charge current is limited to (VCHARGER ā VBAT)/R1 and maximum power dissipation is (Vcharger ā Vbat)2/R1.