SEB and SEGR were performed at room temperature, with¹⁴¹Pr with an angle of incidence of 0° and 27.3° die for an LET_EFF of 66.43 and 75 MeV × cm² / mg, respectively. The V_IN was held at the maximum recommended voltage of 7 V. Flux of approximately 10⁵ ions / cm² × s and fluence ≥ 2 × 10⁷ ions / cm² was used in each run. The device was evaluated when the DUT was enabled and disabled, and loaded to 6 A at all times. Even when the device was disabled, the device was loaded (6 A) to help identify if the device was changing modes or closing the switch (disabled to enabled), due to heavy-ions. When the DUT was disabled, the die temperature was at room temp (approximately 23°C), however, when the part was enabled and loaded with six amps, the power dissipated across the pass element increments the die temperature. To test the device around (20°C to 25°C), an external cool element (vortex tube) was used. The stream of cold air was pointed at the die to chill the device during the testing. No change on current was observed, indicating that the TPS7H2201-SP is SEB and SEGR immune at T = 25°C and LET = 75 MeV × cm² / mg. During the SEB and SEGR testing with the switch disabled the current never increment, indicating that the device never changed status during the exposure. Table 7-2 lists the conditions used for this test. Figure 7-2 shows a typical V_IN current versus time plot. The SEB and SEGR cross-section was calculated based on 0 events observed using a 95% (2σ) confidence interval and combining (or summing) fluences (see Section 11 for discussion of confidence limits).