SLVAE32B August   2018  – December 2023 TPS7H2201-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Device Overview
  5. 2 Single-Event Effects
  6. 3 Test Device and Evaluation Board Information
  7. 4 Depth, Range, and LETEFF Calculation
  8. 5 Irradiation Facility and Setup
  9. 6 Test Setup and Procedures
  10. 7 Single-Event-Latchup (SEL), Single-Event-Burnout (SEB), and Single-Event-Gate-Rupture (SEGR)
    1. 7.1 Single-Event-Latchup (SEL)
    2. 7.2 Single-Event-Burnout (SEB) and Single-Event-Gate-Rupture (SEGR)
  11. 8 Single Event Transient (SET)
  12. 9 Total Ionizing Dose From SEE Experiments
  13. 10Orbital Environment Estimations
  14. 11Confidence Interval Calculations
    1. 11.1 Rate Orbit Calculation
  15. 12Summary
  16. 13References
  17. 14Revision History

13 References

  1. M. Shoga and D. Binder, “Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits”, IEEE Trans. Nucl. Sci, Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J.M. Palau, “Single particle-induced latchup”, IEEE Trans. Nucl. Sci, Vol. 43(2), Mar. 1996, pp. 522-532.
  3. J. M. Hutson, R. D. Schrimpf, and L. W. Massengill, “The effects of scaling and well and substrate contact placement on single event latchup in bulk CMOS technology,” in Proc. RADECS, Sept. 2005, pp. PC24-1–PC24-5.
  4. N. A. Dodds, J. M. Hutson, J. A. Pellish, et al., “Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs, IEEE Trans. Nucl. Sci, Vol. 57(6), Dec. 2010, pp. 3575-3581.
  5. D. B. Estreich and A. Ochoa, Jr., and R. W. Dutton, “An Analysis of Latch-Up Prevention in CMOS IC's Using an Epitaxial-Buried Layer Process*, Proceed. IEEE Elec. Dev. Meeting, 24, Dec. 1978, pp. 230-234.
  6. G. H. Johnson, J. H. Hohl, R. D. Schrimpf and K. F. Galloway, "Simulating single-event burnout of n-channel power MOSFET's," in IEEE Transactions on Electron Devices, vol. 40, no. 5, pp. 1001-1008, May 1993.
  7. J. R. Brews, M. Allenspach, R. D. Schrimpf, K. F. Galloway, J. L. Titus and C. F. Wheatley, "A conceptual model of a single-event gate-rupture in power MOSFETs," in IEEE Transactions on Nuclear Science, vol. 40, no. 6, pp. 1959-1966, Dec. 1993.
  8. Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility, webpage.
  9. James F. Ziegler, The Stopping and Range of Ions in Matter (SRIM) simulation tool, webpage.
  10. Vanderbilt University, CREME-MC, webpage.
  11. A. J. Tylka, et al., "CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. Nucl. Sci., 44(6), 1997, pp. 2150-2160.
  12. A. J. Tylka, W. F. Dietrich, and P. R. Bobery, “Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996”, IEEE Trans. on Nucl. Sci., 44(6), Dec. 1997, pp. 2140 – 2149.
  13. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,“CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code”, Trans. on Nucl. Sci, 44(6), Dec. 1997, pp. 2150 – 2160.
  14. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.