DESAT protection circuits are typically configured with IGBTs because IGBTs show distinct voltages (V_CE) across current (I_C) in the saturation region which makes detection easier, have sharper transitions into the active region, and generally able to handle more power due to larger die size (many have a short circuit withstand rating).

DESAT can also work with SiC MOSFETs. The problem with low voltage MOSFETs is since the overcurrent threshold is typically set well above normal operation to avoid false positives, a low voltage MOSFET may be damaged by overheating well before the circuit even detects an overcurrent event.

By implementing DESAT protection, engineers can ensure power semiconductors stay within safe operating area.