SLVK181 January   2025 DRV8351-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB)
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

2 Single-Event Effects (SEE)

SEE testing was performed on an evaluation board designed for testing the DRV8351-SEP under heavy-ion radiation. The board was powered up in different input and output conditions at Texas A&M University to cover the spectrum of destructive SEE (DSEE) and Single-Event Transients (SET). The devices were tested at the TAMU Cyclotron Radiation Effects Facility using a superconducting cyclotron and an advanced electron cyclotron resonance (ECR) ion source. DSEE testing included Single-Event Latch-up (SEL) and Single-Event Burnout (SEB).

SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed, the device is reset, or until the device is destroyed by the high-current state. The DRV8351-SEP was tested for SEL at the maximum recommended input voltage PVDD of 40V and the maximum recommended GVDD of 15V. 3X PWM mode was used here so only one input was needed to switch all three phases.

  • PWM:
    • 0V - 5V square wave switching at 20kHz, 40kHz, 60kHz, 80kHz, 100kHz(SEL)

  • PWM Modes:

    • Case 1- INH = 0V, INL = 5V (Static SEBON)
    • Case 2-INH/INL square wave switching 0V - 5V at 20-100kHz offset by 180° (Switching SEBON)

TheDRV8351-SEP was characterized for SET with LETEFF = 20 to 47.2MeV × cm2 / mg at flux of approximately 105 ions / cm2 × s, fluence of approximately 107 ions / cm2, and a die temperature of 25°C. For SET the device operated at nominal operating conditions with a PVDD of 42.5V and GVDD of 15V.

The specific test conditions for the devices for SET are as follows:

GVDD = 10 - 15V, PVDD = 20 - 40V , INH/INL square wave switching 0V - 5V at 20-100kHz offset by 180°. All INLx and INHx were tied together, thus switching all outputs at the same time . During testing, the DRV8351-SEP did exhibit a shoot through event across all LET levels. For further explanation see SET section. To see the SET results of the DRV8351-SEP, see Single-Event Transients (SET).