SLVK181 January   2025 DRV8351-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB)
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

7.1 Single-Event Latch-up (SEL) Results

During the SEL testing the device was heated to 125°C by using a Closed-Loop PID controlled heat gun (MISTRAL 6 System (120V, 2400W). The temperature of the die was verified using thermal camera prior to exposure to heavy ions.

The species used for the SEL testing was Silver (109Ag at 15MeV / nucleon). For the 109Ag ion an angle of incidence of 0° was used to achieve an LETEFF = 47.2MeV × cm2 / mg (for more details, see Ion LETEFF, Depth, and Range in Silicon). The kinetic energy in the vacuum for Silver is 1.634 GeV. Flux of approximately 105 ions / cm2× s and a fluence of approximately 107 - 10.57 ions / cm2 per run was used. Run duration to achieve this fluence was approximately 100 seconds. No SEL events were observed on GVDD on any run. PVDD hits the current clamp of 400mA under certain conditions, specifically when we took frequency above 150kHz. The spikes in current show in the graphs below always seemed to recover back to nominal current draw assuming frequency was under 125kHz. Table 8-4 shows the SEL test conditions and results.

Table 7-1 Summary of DRV8351-SEP SEL Test Condition and Results
Device

Board Number

Run

Number

IonLETEFF (MeV × cm2 / mg)Flux (ions × cm2 / mg)Fluence (Number of ions)

Frequency

Phase

GVDD

PVDD

GVDD Pre Beam_Current (mA)

GVDD Post Beam_Current

(mA)

PVDD Pre Beam_Current (mA)

PVDD PostBeam_Current

(mA)

DRV8351-SEP

11

23

109Ag

47.2

1.01E5

1E7

20kHz

A

15

42.5

12.13

11.92

16.37

16.44

DRV8351-SEP

10

20

109Ag

47.2

7.8E4

1E7

20kHz

B

1542.5

12.22

12.81

15.81

15.94

DRV8351-SEP

13

29

109Ag47.2

1.07E5

1E7

20kHz

C

1542.5

11.74

12.32

15.2

15.54

DRV8351-SEP

1

2

109Ag47.2

1.12E5

1E7

125kHz

A

1542.5

66.35

66.45

88.86

88.81

DRV8351-SEP

2

7

109Ag47.2

1.17E5

1.5E7

125kHz

B

1542.5

63.09

63.07

86.04

86.01

DRV8351-SEP

13

30

109Ag47.2

1.07E7

1E7

125kHz

C

1542.5

63.35

63.31

86.98

86.91

Using the MFTF method shown in Single-Event Effects (SEE) Confidence Interval Calculations and combining (or summing) the fluences of the four runs at 125°C (4 × 107), the upper-bound cross-section (using a 95% confidence level) is calculated as:

Equation 1. σSEL≤ 5.68 x 10-8 cm2/device for LETEFF = 48 MeV·cm2/mg and T = 125°C
DRV8351 SEL Run 23 (fsw = 20kHz) - GVDDFigure 7-1 SEL Run 23 (fsw = 20kHz) - GVDD
DRV8351 SEL Run 23 (fsw = 20kHz) - PVDDFigure 7-2 SEL Run 23 (fsw = 20kHz) - PVDD
DRV8351 SEL Run 30(fsw = 125kHz) - GVDDFigure 7-3 SEL Run 30(fsw = 125kHz) - GVDD
DRV8351 SEL Run 30(fsw = 125kHz) - PVDDFigure 7-4 SEL Run 30(fsw = 125kHz) - PVDD