SLVK199 August   2025 TPS7H3024-SP

 

  1.   1
  2.   TPS7H3024-SP Single-Event Effects (SEE)
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During SEB/SEGR testing, the device was tested at room temperature. The same test conditions, in terms of biasing and voltage levels, apply for SEB/SEGR as was used during the SEL testing. In the case of the SEB/SEGR the device was tested in the following state machine states:

  • Disabled (SR_UVLO = 0V)
    • All outputs are low (RESETx = Low and PWRGD = Low)
  • Enabled (SR_UVLO = 1V)
    • All outputs are high (RESETx = High and PWRGD = High)

For more configuration information, please refer to Table 6-1.

The results for twelve runs across six devices for SEBX are shown in Table 8-3. Over all eight runs (four enabled and four disabled) none of the four units exhibited any SEB/SEGR failures, indicating the TPS7H3024-SP is SEB/SEGR free at 75 MeV·cm2/mg. Typical VIN current vs time plots for SEB/SEGR on and off runs are shown in Figure 7-5 and Figure 7-6. Typical VPULL_UPx current vs time plots for SEB/SEGR on and off runs are shown in Figure 7-3 through Figure 7-6.

Table 7-2 Summary of TPS7H3024-SP SEB/SEGR Test Condition and Results
RUN #UNIT #

FACILITY

IONLETEFF (MeV·cm2/mg)FLUX (ions/(cm2·s))FLUENCE (ions/cm2)ON/OFF STATUS

SEB EVENT?

5

1

TAMU

165Ho

75

5.70 × 104

1.00 × 107

On

No

6

1

TAMU

165Ho

75

5.21 × 104

1.00 × 107Off

No

7

2

TAMU

165Ho

75

5.55 × 104

1.00 × 107

On

No

8

2

TAMU

165Ho

75

5.26 × 104

1.00 × 107

Off

No

9

3

TAMU

165Ho

75

5.76 × 104

1.00 × 107

On

No

10

3

TAMU

165Ho

75

5.86 × 104

1.00 × 107

Off

No

11

4

TAMU

165Ho

75

5.95 × 1041.00 × 107

On

No

12

4

TAMU

165Ho

75

5.63 × 1041.00 × 107

Off

No

21

7

KSEE

169Tm

75.1

1.05 × 1051.00 × 107OnNo

22

7

KSEE

169Tm

75.1

1.04 × 1051.00 × 107OffNo

23

8

KSEE

169Tm

75.1

9.98 × 1041.00 × 107OnNo

24

8

KSEE

169Tm

75.1

9.44 × 1041.00 × 107OffNo

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEB ≤ 3.07 × 10–8 cm2/device for LETEFF = 75 MeV·cm2/mg and T = 25°C.

Current versus Time for IIN: SEB On (Mode 0, WD Off) Run #7 Figure 7-3 Current versus Time for IIN: SEB On (Mode 0, WD Off) Run #7
Current versus Time for IIN: SEB Off (Mode 0, WD Off) Run #8 Figure 7-4 Current versus Time for IIN: SEB Off (Mode 0, WD Off) Run #8
Current versus Time for IIN: SEB On (Mode 1, WD SW) Run #9Figure 7-5 Current versus Time for IIN: SEB On (Mode 1, WD SW) Run #9
Current versus Time for IIN: SEB Off (Mode 1, WD SW) Run #10Figure 7-6 Current versus Time for IIN: SEB Off (Mode 1, WD SW) Run #10