SLVK225 August   2025 TPS7H5020-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

1 Introduction

The TPS7H5020-SEP is a radiation-tolerant, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H5020-SEP integrates several key functions such as:

  • Soft-start, enable, and adjustable slope compensation
  • 0.6V ±1% voltage reference tolerance
  • Internal oscillator through the RT pin or external frequency control through the SYNC pin
  • Switching frequencies up to 1MHz
  • Input voltage range from 4.5V to 14V
  • Programmable VLDO voltage (4.5V to 5.5V) that can be connected directly to driver stage input (PVIN) for operation with GaN FETs

The TPS7H5020 has a maximum duty cycle of 100%. The controller supports numerous power converter topologies, including flyback, forward, and boost.

The device is offered in a 24-pin plastic package. General device information and test conditions are listed in the overview information table. For more detailed technical specifications, user-guides, and application notes please go to device product page.

Table 1-1 Overview Information
DESCRIPTION(1) DEVICE INFORMATION
TI Part Number TPS7H5020-SEP
Orderable Part Number

TPS7H5020MPWPTSEP
Device Function PWM Controller with Integrated Gate Driver
Technology LBC7 (Linear BiCMOS 7)
Exposure Facility Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV/nucleon)

and Facility for Rare Istotope Beams, K500 Cyclotron (KSEE), Michigan State University (19.5MeV/nucleon)
Heavy Ion Fluence per Run 1.00 × 107 ions/cm2
Irradiation Temperature 25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.