SLVK225 August   2025 TPS7H5020-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V (using CH # 1 of a E36311A Keysight PS). During the SEB/SEGR testing with the device enabled/disabled, not a single input current event was observed.

The species used for the SEB testing was 109Ag (TAMU) at 15MeV/nucleon and 109Ag (KSEE) at 19.5 MeV/nucleon. For both ions an angle of 0° was used to achieve a LETEFF of ≈ 48MeV·cm2/mg (for more details refer to Table 5-1). The kinetic energy in the vacuum for 109Ag (TAMU) is 1.635GeV and 109Ag (KSEE) is 2.125GeV. Flux of ≈ 9.67 × 104 to 1.26 × 105 ions/(cm2×s) and a fluence of ≈107 ions/cm2 per run was used. Run duration to achieve this fluence was ≈2 minutes. The 6 devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended bias conditions. No SEB/SEGR current events were observed during the 12 runs, indicating that the TPS7H5020-SEP is SEB/SEGR-free up to LETEFF = 48MeV·cm2/mg and across the full electrical specifications.Table 8-4shows the SEB/SEGR test conditions and results.

Table 7-2 Summary of TPS7H5020-SEP SEB/SEGR Test Condition and Results
RUN # UNIT #

Facility

Device Type

Mode

 ION LETEFF (MeV·cm2/mg) FLUX (ions/(cm2×s)) FLUENCE (ions/cm2) ENABLED STATUS

VIN (V)

PVIN (V)

VLDO (V)

SEB EVENT?

7

1

TAMU

TPS7H5020-SEP

Silicon

109Ag

47.7

9.67 x 104

9.99 x 106

EN

14

14

5.5

No

8

1

 TAMU TPS7H5020-SEP

Silicon

 109Ag

47.7

9.77 x 104

 9.99 x 106 DIS

14

14

5.5

No

9

2

 TAMU TPS7H5020-SEP

Silicon

 109Ag

47.7

1.00 x 105

1.00 x 107

EN

14

14

5.5

 No

10

2

 TAMU TPS7H5020-SEP

Silicon

 109Ag

47.7

1.12 x 105

 1.00 x 107

DIS

14

14

5.5

 No

11

3

 TAMU TPS7H5020-SEP

GaN

 109Ag

47.7

1.13 x 105

 1.00 x 107

EN

14

5.5

5.5

 No

12

3

 TAMU TPS7H5020-SEP

GaN

 109Ag

47.7

1.18 x 105

 1.00 x 107

DIS

14

5.5

5.5

 No

13

4

 TAMU TPS7H5020-SEP

GaN

 109Ag

47.7

1.18 x 105

 1.00 x 107

EN

14

5.5

5.5

 No

14

4

 TAMU TPS7H5020-SEP

GaN

 109Ag

47.7

1.26 x 105

 1.00 x 107

DIS

14

5.5

5.5

 No

15

5

KSEE

 TPS7H5020-SEP

Silicon

 109Ag

49.1

 1.02 x 105 1.00 x 107 EN 14

14

 5.5 No

16

5

KSEE

 TPS7H5020-SEP

Silicon

 109Ag 49.1

9.54 x 104

 1.00 x 107 DIS 14

14

 5.5 No

17

6

KSEE

 TPS7H5020-SEP

GaN

 109Ag 49.1

1.15 x 105

 1.00 x 107 EN 14

5.5

 5.5 No

18

6

KSEE

 TPS7H5020-SEP

GaN

 109Ag 49.1

1.18 x 105

 1.00 x 107 DIS 14

5.5

 5.5 No

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEB ≤ 3.07x 10-8 cm2/device for LETEFF = 75 MeV·cm2/mg and T = 25°C.

SEB On Run #7 TPS7H5020-SEP Silicon Mode Figure 7-3 SEB On Run #7 TPS7H5020-SEP Silicon Mode
SEB Off Run #8 TPS7H5020-SEP Silicon Mode Figure 7-4 SEB Off Run #8 TPS7H5020-SEP Silicon Mode
SEB On Run #15 TPS7H5020-SEP GaN Mode Figure 7-5 SEB On Run #15 TPS7H5020-SEP GaN Mode
SEB Off Run #16 TPS7H5020-SEP GaN Mode Figure 7-6 SEB Off Run #16 TPS7H5020-SEP GaN Mode