SLVK225 August   2025 TPS7H5020-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. Introduction
  5. Single-Event Effects (SEE)
  6. Device and Test Board Information
  7. Irradiation Facility and Setup
  8. LETEFF and Range Calculation
  9. Test Setup and Procedures
  10. Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. Single-Event Transients (SET)
  12. Event Rate Calculations
  13. 10Summary
  14.   A References

Summary

The purpose of this study was to characterize the effect of heavy-ion irradiation on the single-event effect (SEE) performance of the TPS7H5020-SEP radiation-tolerant, current mode, single-ended PWM controller with an integrated gate driver. Heavy-ions with LETEFF = 48MeV·cm2/mg were used for the SEE characterization campaign. Flux of 9.14 × 104 to 1.26 × 105 ions/(cm2×s) and fluences of ≈ 1x107 ions/cm2 per run were used for the characterization. The SEE results demonstrated that the TPS7H5020-SEP is free of destructive SEL and SEB at LETEFF = 48MeV·cm2/mg and across the full electrical specifications. Transients at LETEFF = 48MeV·cm2/mg were monitored and discussed CREME96-based worst week event-rate calculations for LEO(ISS) and GEO orbits for DSEE are presented for reference.