SLVSE16E May   2019  – September 2026 TPS1HB08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Protection Mechanisms
        1. 8.3.1.1 Thermal Shutdown
        2. 8.3.1.2 Current Limit
          1. 8.3.1.2.1 Current Limit Foldback
          2. 8.3.1.2.2 Programmable Current Limit
          3. 8.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 8.3.1.2.4 VBB During Short-to-Ground
        3. 8.3.1.3 Voltage Transients
          1. 8.3.1.3.1 Load Dump
          2. 8.3.1.3.2 Driving Inductive Loads
        4. 8.3.1.4 Reverse Battery
        5. 8.3.1.5 Fault Event – Timing Diagrams - Version A and B
        6. 8.3.1.6 Fault Event – Timing Diagrams - Version F
      2. 8.3.2 Diagnostic Mechanisms
        1. 8.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 8.3.2.1.1 Detection With Switch Enabled
          2. 8.3.2.1.2 Detection With Switch Disabled
        2. 8.3.2.2 SNS Output
          1. 8.3.2.2.1 RSNS Value
            1. 8.3.2.2.1.1 High Accuracy Load Current Sense
            2. 8.3.2.2.1.2 SNS Output Filter
        3. 8.3.2.3 Fault Indication and SNS Mux
        4. 8.3.2.4 Resistor Sharing
        5. 8.3.2.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 8.4 Device Functional Modes
      1. 8.4.1 Off
      2. 8.4.2 Standby
      3. 8.4.3 Diagnostic
      4. 8.4.4 Standby Delay
      5. 8.4.5 Active
      6. 8.4.6 Fault
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Ground Protection Network
      2. 9.1.2 Interface With Microcontroller
      3. 9.1.3 I/O Protection
      4. 9.1.4 Inverse Current
      5. 9.1.5 Loss of GND
      6. 9.1.6 Automotive Standards
        1. 9.1.6.1 ISO7637-2
        2. 9.1.6.2 TPS1HB08-Q1 AEC-Q100-012 Short-Circuit Reliability
      7. 9.1.7 Interference on Device Pins
      8. 9.1.8 Thermal Information
    2. 9.2 Typical Application: Resistive Heater Loads
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Thermal Considerations
        2. 9.2.2.2 RILIM Calculation
        3. 9.2.2.3 Diagnostics
          1. 9.2.2.3.1 Selecting the RISNS Value
    3. 9.3 Typical Application: Headlight Bulb Loads
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.3.1.4 Reverse Battery

In the reverse battery condition, the switch automatically enables regardless of the state of EN to prevent excess power dissipation inside the MOSFET body diode. In many applications (for example, resistive loads), the full load current can be present during reverse battery. To activate the automatic switch on feature, SEL must have a path to ground from either from the MCU or it must be tied to ground through RPROT if unused.

There are two options for blocking reverse current in the system. The first option is to place a blocking device (FET or diode) in series with the battery supply, blocking all current paths. The second option is to place a blocking diode in series with the GND node of the high-side switch. This method protects the controller portion of the switch (path 2), but it does not prevent current from flowing through the load (path 3). The diode used for the second option can be shared amongst multiple high-side switches.

Path 1 shown in Figure 8-4 is blocked inside of the device.

TPS1HB08-Q1 Current Path During Reverse BatteryFigure 8-4 Current Path During Reverse Battery

For more information on reverse battery protection, refer to TI's Reverse Battery Protection for High Side Switches application note.