SLVSE16E May 2019 – September 2026 TPS1HB08-Q1
PRODUCTION DATA
Figure 9-1 shows the schematic of a typical application for version A or B of the TPS1HB08-Q1. It includes all standard external components. This section of the datasheet describes the considerations in implementing commonly required application functionality. Version F of the device replaces the ILIM pin with the open-drain FLT pin. In this case, the FLT pin must connect to a 5V rail through a 10kΩ pullup resistor.

| COMPONENT | TYPICAL VALUE | PURPOSE |
|---|---|---|
| RPROT | 15kΩ | Protect microcontroller and device I/O pins. |
| RSNS | 1kΩ | Translate the sense current into sense voltage. |
| CSNS | 100pF – 10nF | Low-pass filter for the ADC input. |
| RGND | 4.7kΩ | Stabilize GND potential during turn-off of inductive load. |
| DGND | BAS21 Diode | Protects device during reverse battery. |
| RILIM | 5kΩ – 25kΩ | Set current limit threshold. |
| CVBB1 | 4.7nF to Device GND | Filtering of voltage transients (for example, ESD, ISO7637-2) and improved emissions. |
| CVBB2 | 220nF to Module GND | Stabilize the input supply and filter out low-frequency noise. |
| COUT | 220nF | Filtering of voltage transients (for example, ESD, ISO7637-2). |