SLVSGL4A September   2023  – May 2026 TPS1HTC30-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Timing Diagrams
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Accurate Current Sense
      2. 8.3.2 Programmable Current Limit
        1. 8.3.2.1 Capacitive Charging
      3. 8.3.3 Inductive-Load Switching-Off Clamp
      4. 8.3.4 Inductive Load Demagnetization
      5. 8.3.5 Full Protection and Diagnostics
        1. 8.3.5.1 Short-Circuit and Overload Protection
        2. 8.3.5.2 Open-Load Detection
        3. 8.3.5.3 Thermal Protection Behavior
        4. 8.3.5.4 Overvoltage (OVP) Protection
        5. 8.3.5.5 UVLO Protection
        6. 8.3.5.6 Reverse Polarity Protection
        7. 8.3.5.7 Protection for MCU I/Os
      6. 8.3.6 Diagnostic Enable Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Working Mode
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Dynamically Changing Current Limit
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
        3. 9.4.2.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.4.2.3 Thermal Considerations

This device possesses thermal shutdown (TABS) circuitry as a protection from overheating. For continuous normal operation, the junction temperature must not exceed the thermal-shutdown trip point. If the junction temperature exceeds the thermal-shutdown trip point, the output turns off. When the junction temperature falls below the thermal-shutdown trip point, the output turns on again.

Calculate the power dissipated by the device according to Equation 14.

Equation 14. P T = I O U T 2 × R D S O N + V S × I N O M

where

  • PT = Total power dissipation of the device

After determining the power dissipated by the device, calculate the junction temperature from the ambient temperature and the device thermal impedance.

Equation 15. T J = T A + R θ J A × P T

For more information, see the How to Drive Resistive, Inductive, Capacitive, and Lighting Loads application note.