SLVSH18C December   2024  – October 2026 TPS4HC120-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Characteristics, SNS
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Pin Current and Voltage Conventions
      2. 7.3.2 Low Power Mode
        1. 7.3.2.1 Entry into LPM
        2. 7.3.2.2 During LPM
        3. 7.3.2.3 Exiting LPM
      3. 7.3.3 Accurate Current Sense
      4. 7.3.4 Adjustable Current Limit
      5. 7.3.5 Inductive-Load Switching-Off Clamp
      6. 7.3.6 Fault Detection and Reporting
        1. 7.3.6.1 Diagnostic Enable Function
        2. 7.3.6.2 Multiplexing of Current Sense
        3. 7.3.6.3 FLT Reporting
        4. 7.3.6.4 Fault Table
      7. 7.3.7 Full Diagnostics
        1. 7.3.7.1 Short-to-GND and Overload Detection
        2. 7.3.7.2 Open-Load Detection
          1. 7.3.7.2.1 Channel On
          2. 7.3.7.2.2 Channel Off
        3. 7.3.7.3 Short-to-Battery Detection
        4. 7.3.7.4 Reverse-Polarity and Battery Protection
        5. 7.3.7.5 Thermal Fault Detection
          1. 7.3.7.5.1 Thermal Protection Behavior
      8. 7.3.8 Full Protections
        1. 7.3.8.1 UVLO Protection
        2. 7.3.8.2 Loss of GND Protection
        3. 7.3.8.3 Loss of Power Supply Protection
        4. 7.3.8.4 Reverse Polarity Protection
        5. 7.3.8.5 Protection for MCU I/Os
    4. 7.4 Device Functional Modes
      1. 7.4.1 Working Modes
        1. 7.4.1.1 SLEEP
        2. 7.4.1.2 DIAGNOSTIC
        3. 7.4.1.3 ACTIVE
        4. 7.4.1.4 STANDBY DELAY
        5. 7.4.1.5 LOW POWER MODE
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 EMC Transient Disturbances Test
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
        1. 8.4.2.1 Without a GND Network
        2. 8.4.2.2 With a GND Network
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

10 Revision History

Changes from Revision B (July 2025) to Revision C (October 2026)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed selectable current limit maximum value from 5A to 4.85A throughout documentGo
  • Added LPM mode to IQ,LPM < 20μA/ch with all 4 channels ONGo
  • Added functional safety informationGo
  • Updated one channel enablement output load current from 2.5A to 3AGo
  • Added inductive energy plots to typical characteristicsGo
  • Added Figure 7-1Go
  • Updated accurate current sense to include GND network clarificationsGo
  • Updated Table 7-1 column one header from Allowed Resistor Value to Allowed Range of Resistor ValuesGo
  • Updated Table 7-1 allowed range of resistor values and corresponding ILIM thresholdGo
  • Added information to clarify hot short currentGo
  • Updated Figure 7-14Go
  • Added information regarding VDS(clamp) voltage changesGo
  • Updated multiplexing of current sense to include open load and short-to-battery faults regarding FLTGo
  • Deleted reverse polarity from open load, short to battery conditionGo
  • Changed from FAULT to FLTGo
  • Changed from ROL to RPUGo
  • Added information regarding RPUGo
  • Changed text regarding thermal protection behavior to accurately reflect category amountGo
  • Added information regarding part power during loss of GNDGo
  • Changed recommended resistor for when in parallel with an IF > 100mA diode from 1kΩ to 4.7kΩGo
  • Added information regarding current consumptionGo
  • Added FLT pin informationGo
  • Added FLT pin informationGo
  • Updated CIC description from 100nF to 15nFGo
  • Updated RGND description from 1kΩ to 4.7kΩGo
  • Added Figure 8-3Go

Changes from Revision A (January 2025) to Revision B (July 2025)

  • Changed TPS4HC120B-Q1 status from preview to production data (active)Go
  • Updated formatting and page flow for clarityGo