SLVSHK4 December   2025 MCT8376Z-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings AUTO
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 SPI Slave Mode Timings
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Output Stage
      2. 7.3.2  PWM Control Mode (1x PWM Mode)
        1. 7.3.2.1 Analog Hall Input Configuration
        2. 7.3.2.2 Digital Hall Input Configuration
        3. 7.3.2.3 Asynchronous Modulation
        4. 7.3.2.4 Synchronous Modulation
        5. 7.3.2.5 Motor Operation
      3. 7.3.3  Device Interface Modes
        1. 7.3.3.1 Serial Peripheral Interface (SPI)
        2. 7.3.3.2 Hardware Interface
      4. 7.3.4  AVDD and GVDD Linear Voltage Regulator
      5. 7.3.5  Charge Pump
      6. 7.3.6  Slew Rate Control
      7. 7.3.7  Cross Conduction (Dead Time)
      8. 7.3.8  Propagation Delay
      9. 7.3.9  Pin Diagrams
        1. 7.3.9.1 Logic Level Input Pin (Internal Pulldown)
        2. 7.3.9.2 Logic Level Input Pin (Internal Pullup)
        3. 7.3.9.3 Open Drain Pin
        4. 7.3.9.4 Push Pull Pin
        5. 7.3.9.5 Seven Level Input Pin
      10. 7.3.10 Current Sense Amplifier Output (SO)
      11. 7.3.11 Active Demagnetization
        1. 7.3.11.1 Automatic Synchronous Rectification Mode (ASR Mode)
          1. 7.3.11.1.1 Automatic Synchronous Rectification in Commutation
          2. 7.3.11.1.2 Automatic Synchronous Rectification in PWM Mode
        2. 7.3.11.2 Automatic Asynchronous Rectification Mode (AAR Mode)
      12. 7.3.12 Cycle-by-Cycle Current Limit
        1. 7.3.12.1 Cycle by Cycle Current Limit with 100% Duty Cycle Input
      13. 7.3.13 Hall Comparators (Analog Hall Inputs)
      14. 7.3.14 Advance Angle
      15. 7.3.15 FGOUT Signal
      16. 7.3.16 Protections
        1. 7.3.16.1 VM Supply Undervoltage Lockout (RESET)
        2. 7.3.16.2 AVDD Undervoltage Protection (AVDD_UV)
        3. 7.3.16.3 GVDD Undervoltage Lockout (GVDD_UV)
        4. 7.3.16.4 VCP Charge Pump Undervoltage Lockout (CPUV)
        5. 7.3.16.5 Overvoltage Protections (OV)
        6. 7.3.16.6 Overcurrent Protection (OCP)
          1. 7.3.16.6.1 OCP Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.16.6.2 OCP Automatic Retry (OCP_MODE = 01b)
          3. 7.3.16.6.3 OCP Report Only (OCP_MODE = 10b)
          4. 7.3.16.6.4 OCP Disabled (OCP_MODE = 11b)
        7. 7.3.16.7 Motor Lock (MTR_LOCK)
          1. 7.3.16.7.1 MTR_LOCK Latched Shutdown (MTR_LOCK_MODE = 00b)
          2. 7.3.16.7.2 MTR_LOCK Automatic Retry (MTR_LOCK_MODE = 01b)
          3. 7.3.16.7.3 MTR_LOCK Report Only (MTR_LOCK_MODE= 10b)
          4. 7.3.16.7.4 MTR_LOCK Disabled (MTR_LOCK_MODE = 11b)
        8. 7.3.16.8 Thermal Warning (OTW)
        9. 7.3.16.9 Thermal Shutdown (OTS)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
        3. 7.4.1.3 Fault Reset (CLR_FLT or nSLEEP Reset Pulse)
      2. 7.4.2 DRVOFF Functionality
    5. 7.5 SPI Communication
      1. 7.5.1 Programming
        1. 7.5.1.1 SPI Format
  9. 8 Register Map
    1. 8.1 STATUS Registers
    2. 8.2 CONTROL Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Hall Sensor Configuration and Connection
      1. 9.2.1 Typical Configuration
      2. 9.2.2 Open Drain Configuration
      3. 9.2.3 Series Configuration
      4. 9.2.4 Parallel Configuration
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Bulk Capacitance
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
      3. 9.4.3 Thermal Considerations
        1. 9.4.3.1 Power Dissipation
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.4.3.1 Power Dissipation

The power loss in MCT8376Z-Q1 include standby power losses, LDO power losses, FET conduction and switching losses, and diode losses. The FET conduction loss dominates the total power dissipation in MCT8376Z-Q1. At start-up and fault conditions, the output current is much higher than normal current; remember to take these peak currents and the duration of the currents into consideration. The total device dissipation is the power dissipated in each of the three half bridges added together. The maximum amount of power that the device can dissipate depends on ambient temperature and heatsinking. Note that RDS,ON increases with temperature, so as the device heats, the power dissipation increases. Take this into consideration when designing the PCB and heatsinking.