SLVSJP6 August   2025 ISOM8110-EP

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Insulation Specifications
    6. 5.6 Safety-Related Certifications
    7. 5.7 Safety Limiting Values
    8. 5.8 Electrical Characteristics
    9. 5.9 Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Active Mode
      2. 7.4.2 Saturation Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Typical Application
        1. 8.1.1.1 Design Requirements
        2. 8.1.1.2 Detailed Design Procedure
          1. 8.1.1.2.1 Sizing RPULLUP
          2. 8.1.1.2.2 Sizing RIN
        3. 8.1.1.3 Application Curves
    2. 8.2 Power Supply Recommendations
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

8.1.1.1 Design Requirements

To design with ISOM8110-EP devices, use the parameters listed in Table 8-1.

Table 8-1 Design Parameters
PARAMETERVALUE

Input forward current range, IF

0.7mA (min), 20mA (max)

Current transfer ratio at IF = 5mA, CTR100% to 155%
Collector current tolerance, IC50mA (max)
Collector-emitter voltage (saturation), VCE(SAT)0.3V (max)
Input forward voltage, VF1.2V (typ)