SLVSM33 September   2026 TPS7H6200-SEP

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VIN PVIN
      2. 8.3.2  Bootstrap Operation
      3. 8.3.3  Voltage Reference
      4. 8.3.4  Enable
      5. 8.3.5  Start-Up and UVLO
      6. 8.3.6  Programmable Dead-Time
      7. 8.3.7  Current Sense
      8. 8.3.8  Over Temperature Protection (TSD)
      9. 8.3.9  Fault Reporting (FLTB)
      10. 8.3.10 PWM
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Enable Configuration
        2. 9.2.2.2 Dead Time Setting
        3. 9.2.2.3 FLTB / Controller Connection
        4. 9.2.2.4 Configuring Current Sense
          1. 9.2.2.4.1 Current Sense Accuracy
        5. 9.2.2.5 FET Thermal Impedance
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1.     54

Features

  • Total ionizing dose (TID) characterized up to 50krad(Si)
  • Destructive Single Event Effects (DSEE) characterized
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer LET = 43MeV⋅cm2/mg
  • Single Event Effects characterized
    • Single-event functional interrupt (SEFI) and single-event transient (SET) characterized up to LET = 43MeV⋅cm2/mg
  • Available in military (–55°C to 125°C) temperature
  • 3.2mΩ (typ) high side FET RDSON, 1mΩ low side FET RDSON
  • High efficiency (VPVIN = 12V, VVOUT = 0.8V, fSW = 500kHz, TA =25°C, L = 200nH, DCR = 180mΩ):
    • η = 89.6% at 20A
    • η = 87.2% at 40A
    • η = 84.9% at 52A
  • 52A maximum continuous current
  • Integrated low-side current sense
    • Total RSS accuracy of 14.5% for nominal load currents greater than 40A
  • Fault pin indicator for overcurrent, overtemperature, or UVLO detection
  • DrMOS 3.3V and 5V PWM input signal compatibility
  • Integrated overtemperature and overcurrent protection