SLVUD94 September   2025

 

  1.   1
  2. 1Description
  3. 2Features
  4. 34
  5. 3Evaluation Module Overview
    1. 3.1 Introduction
    2. 3.2 Kit Contents
    3. 3.3 Specifications
    4. 3.4 Device Information
  6. 4Hardware
    1. 4.1 Definitions
    2. 4.2 Equipment
      1. 4.2.1 Power Supply
      2. 4.2.2 Function Generator
      3. 4.2.3 DMM
      4. 4.2.4 Oscilloscope
    3. 4.3 Connection Descriptions
  7. 5Implementation Results
    1. 5.1 Evaluation Setup
      1. 5.1.1 DC Power Supply Settings
      2. 5.1.2 Digital Multi-Meter Settings
      3. 5.1.3 Two-Channel Function Generator Settings
      4. 5.1.4 Oscilloscope Settings
      5. 5.1.5 Bench Setup Diagram
    2. 5.2 External Bootstrap Diode
    3. 5.3 Power Up and Power Down Procedure
      1. 5.3.1 Power Up
      2. 5.3.2 Power Down
    4. 5.4 Typical Performance Waveforms (CL = 1000pF)
      1. 5.4.1 Propagation Delays
  8. 6Hardware Design Files
    1. 6.1 Schematic
    2. 6.2 PCB Layouts
    3. 6.3 Bill of Materials (BOM)
  9. 7Additional Information
    1. 7.1 Trademarks

3.4 Device Information

The UCC27735-Q1 is a 700V half-bridge gate driver with 3.5A source and 4A sink current capability, targeted to drive power MOSFETs or IGBTs. The device comprises of one ground-referenced channel (LO) and one floating channel (HO) which is designed to drive half-bridge configured MOSFET's and IGBT's operating with boostrap supplies. The device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, and wide negative transient safe operating area (NTSOA) on the switch node (HS).

The device accepts a wide range of bias supply input from 10V to 21V and offers UVLO protection for both the VDD and HB bias supply pins. The UCC27735-Q1 is available in an SOIC package and is rated to operate from –40°C to 150°C.