SNOSD74C May   2019  – December 2024 LMG1025-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stage
      2. 6.3.2 Output Stage
      3. 6.3.3 Bias Supply and Under Voltage Lockout
      4. 6.3.4 Overtemperature Protection (OTP)
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Handling Ground Bounce
        2. 7.2.2.2 Creating Nanosecond Pulse
        3. 7.2.2.3 VDD and Overshoot
        4. 7.2.2.4 Operating at Higher Frequency
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Gate Drive Loop Inductance and Ground Connection
      2. 9.1.2 Bypass Capacitor
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Trademarks
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) LMG1025-Q1 UNIT
DRV (WSON) DEE (WSON)
6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 72.4 66.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 90.1 87.3 °C/W
RθJB Junction-to-board thermal resistance 35.8 30.8 °C/W
ΨJT Junction-to-top characterization parameter 3.1 2.2 °C/W
YJB Junction-to-board characterization parameter 35.8 30.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 13.8 6.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.