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LMG1025-Q1

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Automotive 7A/5A single-channel low-side driver with 5V UVLO for narrow pulse applications

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Data sheet

LMG1025-Q1

ACTIVE
Order now

Product details

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features 1.25-ns Pulse Width Operating temperature range (°C) -40 to 125 Rise time (ns) 0.65 Fall time (ns) 0.85 Propagation delay time (µs) 0.0029 Input threshold CMOS, TTL Channel input logic TTL Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 4.19 Driver configuration Dual inputs
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features 1.25-ns Pulse Width Operating temperature range (°C) -40 to 125 Rise time (ns) 0.65 Fall time (ns) 0.85 Propagation delay time (µs) 0.0029 Input threshold CMOS, TTL Channel input logic TTL Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 4.19 Driver configuration Dual inputs
WSON (DEE) 6 4 mm² (2 mm × 2 mm) WSON (DRV) 6 4 mm² (2 mm × 2 mm)
  • AEC-Q100 grade 1 qualified
  • 1.25ns typical minimum input pulse width
  • 2.6ns typical rising propagation delay
  • 2.9ns typical falling propagation delay
  • 300ps typical pulse distortion
  • Independent 7A pull-up and 5A pull-down current
  • 650ps typical rise time (220pF load)
  • 850ps typical fall time (220pF load)
  • 2mm x 2mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5V supply voltage
  • AEC-Q100 grade 1 qualified
  • 1.25ns typical minimum input pulse width
  • 2.6ns typical rising propagation delay
  • 2.9ns typical falling propagation delay
  • 300ps typical pulse distortion
  • Independent 7A pull-up and 5A pull-down current
  • 650ps typical rise time (220pF load)
  • 850ps typical fall time (220pF load)
  • 2mm x 2mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5V supply voltage

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.
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Technical documentation

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* Data sheet LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications datasheet (Rev. C) PDF | HTML Dec 6, 2024
Application note TLV3602 ToF LiDAR Transmitter Application Design Guide PDF | HTML Jul 15, 2026
Application note Increasing Precision in LiDAR and Laser Scanner Applications With Discrete Non-Isolated GaN Gate Drivers PDF | HTML Jan 21, 2026
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML Jan 22, 2024
Application note Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML Sep 8, 2023
Application brief GaN Applications PDF | HTML Aug 10, 2022
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML Aug 10, 2022
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML Aug 4, 2022
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML Aug 4, 2022
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML Aug 2, 2022
Functional safety information LMG1025-Q1 FIT, FMD, and Pin FMA PDF | HTML Jun 24, 2022
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML Nov 10, 2021
Certificate LMG1025-Q1EVM EU Declaration of Conformity (DoC) (Rev. A) Sep 16, 2020
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
Application note GaN Gate Driver Layout Help May 23, 2019
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs Jan 18, 2019
Application brief Enable Function with Unused Differential Input Jul 11, 2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole Mar 16, 2018
White paper A comprehensive methodology to qualify the reliability of GaN products Mar 2, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG1020EVM-006 — LMG1020 GaN Low-side Driver + GaN FET LiDAR Evaluation Module

The LMG1020EVM-006 is a small, easy-to-use power stage for LIDAR laser drive. The EVM includes an integrated resistive load, (laser not included) and takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage. The board can demonstrate (...)
User guide: PDF | HTML
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Evaluation board

LMG1025-Q1EVM — LMG1025-Q1 GaN low-side driver and GaN FET LiDAR evaluation module

The LMG1025-Q1EVM is a small, easy-to-use power stage with integrated resistive load (laser not included). It takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage.
User guide: PDF
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Simulation model

LMG1020 PSpice Transient Model (Rev. C)

SNOM618C.ZIP (1575 KB) - PSpice model
Supported products & hardware
Simulation model

LMG1020 TINA-TI Transient Spice Model (Rev. A)

SNOM620A.ZIP (43 KB) - TINA-TI Spice model
Supported products & hardware
Calculation tool

SLURB15 — LMG1025-Q1 Schematic Review Template

Supported products & hardware
Reference design

TIDA-01573 — Nanosecond Laser Driver Reference Design for LiDAR

This light distancing and ranging (LiDAR) reference design showcases the LMG1020 and LMG1025-Q1 low side gate drivers for narrow pulse applications. These devices are capable of driving a FET to produce <1.5-ns laser optical pulses in excess of 100W.
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Package Pins CAD symbols, footprints & 3D models
WSON (DEE) 6 Ultra Librarian
WSON (DRV) 6 Ultra Librarian
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