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LMG1025-Q1

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Automotive 7A/5A single-channel low-side driver with 5V UVLO for narrow pulse applications

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Data sheet

LMG1025-Q1

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features 1.25-ns Pulse Width Operating temperature range (°C) -40 to 125 Rise time (ns) 0.65 Fall time (ns) 0.85 Propagation delay time (µs) 0.0029 Input threshold CMOS, TTL Channel input logic TTL Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 4.19 Driver configuration Dual inputs
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features 1.25-ns Pulse Width Operating temperature range (°C) -40 to 125 Rise time (ns) 0.65 Fall time (ns) 0.85 Propagation delay time (µs) 0.0029 Input threshold CMOS, TTL Channel input logic TTL Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 4.19 Driver configuration Dual inputs
WSON (DEE) 6 4 mm² 2 x 2 WSON (DRV) 6 4 mm² 2 x 2
  • AEC-Q100 grade 1 qualified
  • 1.25ns typical minimum input pulse width
  • 2.6ns typical rising propagation delay
  • 2.9ns typical falling propagation delay
  • 300ps typical pulse distortion
  • Independent 7A pull-up and 5A pull-down current
  • 650ps typical rise time (220pF load)
  • 850ps typical fall time (220pF load)
  • 2mm x 2mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5V supply voltage
  • AEC-Q100 grade 1 qualified
  • 1.25ns typical minimum input pulse width
  • 2.6ns typical rising propagation delay
  • 2.9ns typical falling propagation delay
  • 300ps typical pulse distortion
  • Independent 7A pull-up and 5A pull-down current
  • 650ps typical rise time (220pF load)
  • 850ps typical fall time (220pF load)
  • 2mm x 2mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5V supply voltage

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.

The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.
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Technical documentation

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Type Title Date
* Data sheet LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications datasheet (Rev. C) PDF | HTML 06 Dec 2024
Application note Increasing Precision in LiDAR and Laser Scanner Applications With Discrete Non-Isolated GaN Gate Drivers PDF | HTML 21 Jan 2026
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 Jan 2024
Application note Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) PDF | HTML 08 Sep 2023
Application brief GaN Applications PDF | HTML 10 Aug 2022
Application brief GaN Driver Schematic and Layout Recommendations PDF | HTML 10 Aug 2022
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 04 Aug 2022
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 04 Aug 2022
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 02 Aug 2022
Functional safety information LMG1025-Q1 FIT, FMD, and Pin FMA PDF | HTML 24 Jun 2022
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 10 Nov 2021
Certificate LMG1025-Q1EVM EU Declaration of Conformity (DoC) (Rev. A) 16 Sep 2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application note GaN Gate Driver Layout Help 23 May 2019
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18 Jan 2019
Application brief Enable Function with Unused Differential Input 11 Jul 2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 16 Mar 2018
White paper A comprehensive methodology to qualify the reliability of GaN products 02 Mar 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG1020EVM-006 — LMG1020 GaN Low-side Driver + GaN FET LiDAR Evaluation Module

The LMG1020EVM-006 is a small, easy-to-use power stage for LIDAR laser drive. The EVM includes an integrated resistive load, (laser not included) and takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage. The board can demonstrate (...)
User guide: PDF | HTML
Not available on TI.com
Evaluation board

LMG1025-Q1EVM — LMG1025-Q1 GaN low-side driver and GaN FET LiDAR evaluation module

The LMG1025-Q1EVM is a small, easy-to-use power stage with integrated resistive load (laser not included). It takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage.
User guide: PDF
Not available on TI.com
Simulation model

LMG1020 PSpice Transient Model (Rev. C)

SNOM618C.ZIP (1575 KB) - PSpice Model
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Simulation model

LMG1020 TINA-TI Transient Spice Model (Rev. A)

SNOM620A.ZIP (43 KB) - TINA-TI Spice Model
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Calculation tool

SLURB15 — LMG1025-Q1 Schematic Review Template

Supported products & hardware

Supported products & hardware

Products
Low-side drivers
  • LMG1025-Q1 — Automotive 7A/5A single-channel low-side driver with 5V UVLO for narrow pulse applications
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

TIDA-01573 — Nanosecond Laser Driver Reference Design for LiDAR

This light distancing and ranging (LiDAR) reference design showcases the LMG1020 and LMG1025-Q1 low side gate drivers for narrow pulse applications. These devices are capable of driving a FET to produce <1.5-ns laser optical pulses in excess of 100W.
Design guide: PDF
Schematic: PDF
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WSON (DEE) 6 Ultra Librarian
WSON (DRV) 6 Ultra Librarian
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