SNOSDI8B May   2024  – February 2026 LMG2650

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 GaN Power FET Switching Parameters
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  GaN Power FET Switching Capability
      2. 7.3.2  Turn-On Slew-Rate Control
      3. 7.3.3  Current-Sense Emulation
      4. 7.3.4  Bootstrap Diode Function
      5. 7.3.5  Input Control Pins (EN, INL, INH, GDH)
      6. 7.3.6  INL - INH Interlock
      7. 7.3.7  AUX Supply Pin
        1. 7.3.7.1 AUX Power-On Reset
        2. 7.3.7.2 AUX Under-Voltage Lockout (UVLO)
      8. 7.3.8  BST Supply Pin
        1. 7.3.8.1 BST Power-On Reset
        2. 7.3.8.2 BST Under-Voltage Lockout (UVLO)
      9. 7.3.9  Overcurrent Protection
      10. 7.3.10 Overtemperature Protection
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 LLC Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 AHB Application
      3. 8.2.3 Motor Drives Application
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Solder-Joint Stress Relief
        2. 8.4.1.2 Signal-Ground Connection
        3. 8.4.1.3 CS Pin Signal
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.3.2 Turn-On Slew-Rate Control

The turn-on slew rate of both the low-side and high-side GaN power FETs are individually programmed to one of four discrete settings. The low-side slew rate is programmed by the resistance between the RDRVL and AGND pins. The high-side slew rate is programmed by the resistance between the RDRVH and SW pins. The low-side slew-rate setting is determined one time during AUX power up when the AUX voltage goes above the AUX power-on reset voltage. The high-side slew-rate setting is determined one time during BST-to-SW power up when the BST-to-SW voltage goes above the BST power-on reset voltage. The slew-rate setting determination time is not specified but is around 0.4µs.

Table 7-1 shows the recommended typical resistance programming value for the four slew rate settings and the typical turn-on slew rate at each setting. As noted in the table, an open-circuit connection is acceptable for programming slew-rate setting 0 and a short-circuit connection (RDRVL shorted to AGND for the low-side turn-on slew rate) (RDRVH shorted to SW for the high-side turn-on slew rate) is acceptable for programming slew-rate setting 3.

Table 7-1 Slew-Rate Setting
TURN-ON SLEW RATE SETTING RECOMMENDED TYPICAL PROGRAMMING RESISTANCE (kΩ) TYPICAL TURN-ON SLEW RATE (V/ns) COMMENT
0 120 2 Open-circuit connection for programming resistance is acceptable.
1 47 5
2 22 23
3 5.6 50 Short-circuit connection for programming resistance (RDRVL shorted to AGND for low-side slew rate) (RDRVH shorted to SW for high-side slew rate) is acceptable.