SNVSCF0B October 2024 – May 2026 LM65680-Q1
ADVMIX
The LM656x0-Q1 protects from overcurrent conditions by cycle-by-cycle current limiting on both the high-side and the low-side power MOSFETs.
High-side MOSFET overcurrent protection is implemented by the nature of the peak current mode control. The high-side current is sensed when the high-side MOSFET turns on after a short blanking time. The high-side current is compared to the minimum of a fixed current setpoint, or the output of the voltage regulation loop minus slope compensation, every switching cycle.
When the low-side MOSFET is turned on, the current going through the MOSFET is also sensed and monitored. Like the high-side MOSFET, the low-side MOSFET turn-off is commanded by the voltage control loop. For a low-side device, turn-off is prevented if the current limit is exceeded, even if the oscillator normally starts a new switching cycle. Also, like the high-side device, there is a limit on the turn-off current amplitude. This is called the low-side current limit; see the Electrical Characteristics for values. Upon engaging low-side current limit, the low-side MOSFET stays on and the high-side MOSFET does not turn on. The low-side MOSFET turns off after the low-side current falls below the limit. The high-side MOSFET turns on again as long as at least one clock period has passed since the last time the high-side MOSFET turned on.
The net effect of the operation of high-side and low-side current limits is that the IC operates in hysteretic control. Because the current waveform assumes values between IL-HS and IL-LS, the output current is close to the average of these two values unless the duty cycle is very high. After operating in current limit, hysteretic control is used and current does not increase as the output voltage approaches zero.
Upon removal of the overload condition, the device recovers as though in soft start; see Section 7.3.10.1. Note that hiccup can be triggered if output voltage drops below approximately 0.4 times the intended output voltage.