TIDUDO6B May 2019 – October 2020
Figure 2-3 shows the schematic for configuring the CC2640R2F MCU.
Figure 2-3 CC2640R2F MCU SchematicThe VDSS power supply for the MCU, 2.1 V, is derived using the TPS63036 device. The VDDR power supply is generated using the internal DC/DC of the CC2640R2F MCU, and L8, C20, C25, and C27 form the filter components for the same. Y1 is the 24-MHz, high-frequency, external clock and Y2 is the 32-kHz, low-frequency, external clock. The GPIO pins of the CC2640R2F MCU (DIO_0 to DIO_30) interface with different functions such as Memory interface lines, AFE4900 interface lines, SPI communication, LED drives, and so on.
The RF front end is used in differential-ended configurations with internal biasing. A Balun LFB182G45BG5D920 device is used for the RF front end and tuned for application. J7 is a connector for conducted RF measurements (if required). The antenna is a PCB antenna.
Figure 2-4 Decoupling for CC2640R2F MCUVBATT is connected to VDSS through L5 (a GHz noise-suppression chip ferrite bead), providing a low-noise supply to the MCU. C19 and C22 are the decoupling capacitors. A 2.1 V is connected to the VDDS2 and VDDS3 pins through L6 (a GHz noise-suppression chip ferrite bead), providing a low-noise supply to the MCU. C23 and C24 are the decoupling capacitors (see Figure 2-4).
Figure 2-5 MCU Programming ConnectorThe MCU is programmed using a JTAG connection, as shown in Figure 2-5. The connector inputs are protected by ESD diodes (TPD1E10B06DPYR) from Texas Instruments. The TPD1E10B06 device is a single-channel, ESD, TVS diode in a small 0402 package. This TVS protection product offers ±30-kV contact ESD, ±30-kV IEC air-gap protection, and an ESD clamp circuit, with a back-to-back TVS diode for bipolar or bidirectional signal support.