The TLC27M4 and TLC27M9 quad operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds comparable to that of general-purpose bipolar devices.These devices use Texas Instruments silicon-gate LinCMOSTM
LinCMOS is a trademark of Texas Instruments Incorporated. technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, make these cost-effective devices ideal for applications that have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption.
Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10 mV) to the high-precision TLC27M9 (900 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOSTM operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power consumption, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.
The device inputs and outputs are designed to withstand -100-mA surge currents without sustaining latch-up.
The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in handling these devices, as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.
|TA || |
|PACKAGE ||CHIP |
|SMALL OUTLINE |
|CHIP CARRIER |
|CERAMIC DIP |
|PLASTIC DIP |
|0°C to 70°C ||900 uV ||TLC27M9CD ||-- ||-- ||TLC27M9CN ||-- ||-- |
|2 mV ||TLC27M4BCD ||-- ||-- ||TLC27M4BCN ||-- ||-- |
|5 mV ||TLC27M4ACD ||-- ||-- ||TLC27M4ACN ||-- ||-- |
|10 mV ||TLC27M4CD ||-- ||-- ||TLC27M4CN ||TLC27M4CPW ||TLC27M4Y |
|-40°C to 85°C ||900 uV ||TLC27M9ID ||-- ||-- ||TLC27M9IN ||-- ||-- |
|2 mV ||TLC27M4BID ||-- ||-- ||TLC27M4BIN ||-- ||-- |
|5 mV ||TLC27M4AID ||-- ||-- ||TLC27M4AIN ||-- ||-- |
|10 mV ||TLC27M4ID ||-- ||-- ||TLC27M4IN ||TLC27M41PW ||-- |
|-55°C to 125°C ||900 uV ||TLC27M9MD ||TLC27M9MFK ||TLC27M9MJ ||TLC27M9MN ||-- ||-- |
|10 mV ||TLC27M4MD ||TLC27M4MFK ||TLC27M4MJ ||TLC27M4MN ||-- ||-- |
The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).
|Part number||Order||Number of channels (#)||Total supply voltage (Min) (+5V=5, +/-5V=10)||Total supply voltage (Max) (+5V=5, +/-5V=10)||GBW (Typ) (MHz)||Slew rate (Typ) (V/us)||Rail-to-rail||Vos (offset voltage @ 25 C) (Max) (mV)||Iq per channel (Typ) (mA)||Vn at 1 kHz (Typ) (nV/rtHz)||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)||Offset drift (Typ) (uV/C)||Features||Input bias current (Max) (pA)||CMRR (Typ) (dB)||Output current (Typ) (mA)||Architecture|
||4||3||16||0.525||0.46||In to V-||2||0.105||32||Catalog||
-40 to 85
0 to 70
PDIP | 14
SOIC | 14
14PDIP: 181 mm2: 9.4 x 19.3 (PDIP | 14)
14SOIC: 52 mm2: 6 x 8.65 (SOIC | 14)