The TLV232x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. This amplifier is especially well suited to ultra-low-power systems that require devices to consume the absolute minimum of supply currents. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail.
These amplifiers are specifically targeted for use in very low-power, portable, battery-driven applications with the maximum supply current per operational amplifier specified at only 27 uA over its full temperature range of -40°C to 85°C.
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.
To facilitate the design of small portable equipment, the TLV232x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV232x incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD can result in the degradation of the device parametric performance.
LinCMOS is a trademark of Texas Instruments Incorporated.
|Part number||Order||Number of channels (#)||Total supply voltage (Min) (+5V=5, +/-5V=10)||Total supply voltage (Max) (+5V=5, +/-5V=10)||GBW (Typ) (MHz)||Slew rate (Typ) (V/us)||Rail-to-rail||Vos (offset voltage @ 25 C) (Max) (mV)||Iq per channel (Typ) (mA)||Vn at 1 kHz (Typ) (nV/rtHz)||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)||Offset drift (Typ) (uV/C)||Features||Input bias current (Max) (pA)||CMRR (Typ) (dB)||Output current (Typ) (mA)||Architecture|
In to V-
|9||0.006||68||Catalog||-40 to 85||
PDIP | 8
SOIC | 8
TSSOP | 8
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8)
In to V-
|10||0.006||68||Catalog||-40 to 85||
PDIP | 14
SOIC | 14
TSSOP | 14
14PDIP: 181 mm2: 9.4 x 19.3 (PDIP | 14)
14SOIC: 52 mm2: 6 x 8.65 (SOIC | 14)
14TSSOP: 32 mm2: 6.4 x 5 (TSSOP | 14)