TLV2332 Dual Low-Voltage Low-Power Operational Amplifier | TI.com

TLV2332
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Dual Low-Voltage Low-Power Operational Amplifier

Dual Low-Voltage Low-Power Operational Amplifier - TLV2332
Datasheet
 

Description

The TLV233x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike the TLV2322 which is optimized for ultra-low power, the TLV233x is designed to provide a combination of low power and good ac performance. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input-voltage range includes the negative rail and extends to within 1 V of the positive rail.

Having a maximum supply current of only 310 uA per amplifier over full temperature range, the TLV233x devices offer a combination of good ac performance and microampere supply currents. From a 3-V power supply, the amplifier's typical slew rate is 0.38 V/us and its bandwidth is 300 kHz.

These amplifiers offer a level of ac performance greater than that of many other devices operating at comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current or battery-powered applications.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOSTM technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.

To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

Features

  • Wide Range of Supply Voltages Over Specified Temperature Range:
  • TA = -40°C to 85°C...2 V to 8 V
  • Fully Characterized at 3 V and 5 V
  • Single-Supply Operation
  • Common-Mode Input-Voltage Range
    Extends Below the Negative Rail and up to
    VDD -1 V at TA = 25°C
  • Output Voltage Range Includes Negative Rail
  • High Input Impedance...1012 Typ
  • ESD-Protection Circuitry
  • Designed-In Latch-Up Immunity
  • LinCMOS is a trademark of Texas Instruments Incorporated.

Parametrics

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Part number Order Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features Input bias current (Max) (pA) CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
TLV2332 Order now 2     2     8     0.525     0.43     In to V-
Out    
9     0.105     32     Catalog     -40 to 85     PDIP | 8
SOIC | 8
TSSOP | 8    
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8)    
1.7         200     91     9     CMOS