The TLVx313-Q1 family of
single- and dual-channel operational amplifiers combine low power consumption with good
performance. This makes them designed for a wide range of applications,
such as infotainment, engine control units, automotive lighting and
more. The family features rail-to-rail input and output (RRIO) swings, low quiescent current (65
µA, typical), wide bandwidth (1 MHz) and very low noise (26 nV/√Hz at 1 kHz), making them
attractive for a variety of battery-powered applications that require a good balance between cost
and performance. Further, low-input-bias current enables these devices to be used in applications
with megaohm source impedances.
The robust design of the TLVx313-Q1 devices provides
ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 100 pF,
integrated RFI/EMI rejection filter, no phase reversal in overdrive conditions, and high
electrostatic discharge (ESD) protection (4-kV HBM).
The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to
5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.
The single-channel TLV313-Q1 device is available in
an SC70-5 package.The dual-channel TLV2313-Q1 device is offered in SOIC-8 (D) and VSSOP-8 (DGK) packages.
The TLVx313-Q1 family of
single- and dual-channel operational amplifiers combine low power consumption with good
performance. This makes them designed for a wide range of applications,
such as infotainment, engine control units, automotive lighting and
more. The family features rail-to-rail input and output (RRIO) swings, low quiescent current (65
µA, typical), wide bandwidth (1 MHz) and very low noise (26 nV/√Hz at 1 kHz), making them
attractive for a variety of battery-powered applications that require a good balance between cost
and performance. Further, low-input-bias current enables these devices to be used in applications
with megaohm source impedances.
The robust design of the TLVx313-Q1 devices provides
ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 100 pF,
integrated RFI/EMI rejection filter, no phase reversal in overdrive conditions, and high
electrostatic discharge (ESD) protection (4-kV HBM).
The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to
5.5 V (±2.75 V), and are specified over the extended temperature range of –40°C to +125°C.
The single-channel TLV313-Q1 device is available in
an SC70-5 package.The dual-channel TLV2313-Q1 device is offered in SOIC-8 (D) and VSSOP-8 (DGK) packages.