Product details

Number of channels (#) 2 IO capacitance (Typ) (pF) 0.7 Vrwm (V) 3.6 IEC 61000-4-2 contact (+/- kV) 8 IEC 61000-4-5 (A) 5 Features Bi-/uni-directional Uni-Directional IO leakage current (Max) (nA) 100 Rating Catalog Operating temperature range (C) -40 to 85 Dynamic resistance (Typ) (Ω) 0.6 Clamping voltage (V) 8
Number of channels (#) 2 IO capacitance (Typ) (pF) 0.7 Vrwm (V) 3.6 IEC 61000-4-2 contact (+/- kV) 8 IEC 61000-4-5 (A) 5 Features Bi-/uni-directional Uni-Directional IO leakage current (Max) (nA) 100 Rating Catalog Operating temperature range (C) -40 to 85 Dynamic resistance (Typ) (Ω) 0.6 Clamping voltage (V) 8
SOT-9X3 (DRT) 3 1 mm² 1 x 1
  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (level 4 contact)
  • IEC 61000-4-5 surge protection
    • 5 A (8/20 µs)
  • Low capacitance
    • DRT: 0.7 pF (typical)
    • DQA: 0.8 pF (typical)
  • Dynamic resistance: 0.6 Ω (typical)
  • Space-saving DRT, DQA packages
  • Flow-through pin mapping
  • Supports USB 3.0 data rates (5 Gbps)
  • IEC 61000-4-2 ESD protection (level 4 contact)
  • IEC 61000-4-5 surge protection
    • 5 A (8/20 µs)
  • Low capacitance
    • DRT: 0.7 pF (typical)
    • DQA: 0.8 pF (typical)
  • Dynamic resistance: 0.6 Ω (typical)
  • Space-saving DRT, DQA packages
  • Flow-through pin mapping

The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.

The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.

The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.

The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 are 2 and 4 channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode arrays. The TPDxEUSB30/A devices are rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Contact). These devices also offer 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (Surge) specification.

The TPD2EUSB30A offers low 4.5-V DC break-down voltage. The low capacitance, low break-down voltage, and low dynamic resistance make the TPD2EUSB30A a superior protection device for high-speed differential IOs.

The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (2.5 mm × 1.0 mm) package.

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Technical documentation

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Type Title Date
* Data sheet TPDxEUSB30x 2-, 4-Channel ESD Protection for Super-Speed USB 3.0 Interface datasheet (Rev. G) 01 Jun 2021
User guide Generic ESD Evaluation Module User's Guide (Rev. A) 27 Sep 2021
White paper Designing USB for short-to-battery tolerance in automotive environments 10 Feb 2016
Application note ESD Layout Guide 04 Mar 2015
Analog design journal Design Considerations for System-Level ESD Circuit Protection 25 Sep 2012
Application note Reading and Understanding an ESD Protection Datasheet 19 May 2010

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

ESDEVM — Generic ESD Evaluation Module

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Simulation model

TPD2EUSB30A IBIS Model

SLVM401.ZIP (2 KB) - IBIS Model
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TI’s high performance ARM® Cortex®-A15 based AM57x processors also integrate C66x DSPs. These DSPs were designed to handle high signal and data processing tasks that are often required by industrial, automotive and financial applications. The AM57x OpenCL implementation makes it easy (...)
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