Product details


Number of channels (#) 4 IO capacitance (Typ) (pF) 4.8 Vrwm (V) 5.5 IEC 61000-4-2 contact (+/- kV) 15 IEC 61000-4-5 (A) 3 Interface Memory/SIM Card Features Bi-/uni-directional Bi-Directional IO leakage current (Max) (nA) 100 Rating Catalog Operating temperature range (C) -40 to 125 Dynamic resistance (Typ) (Ω) 0.45 Clamping voltage (V) 10 open-in-new Find other ESD protection & TVS surge diodes

Package | Pins | Size

X2SON (DPW) 4 1 mm² .8 x .8 open-in-new Find other ESD protection & TVS surge diodes


  • Provides System-Level ESD Protection for Low-
    Voltage I/O Interface
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±15-kV Contact Discharge
    • ±15-kV Air-Gap Discharge
  • IEC 61000-4-5 (Surge): 3 A (8/20 µs)
  • I/O Capacitance 4.8 pF (Typical)
  • Dynamic Resistance 0.45 Ω (Typical)
  • DC Breakdown Voltage ±6 V (Minimum)
  • Ultra-Low Leakage Current 100 nA (Maximum)
  • 10-V Clamping Voltage (Maximum at IPP = 1 A)
  • Industrial Temperature Range: –40°C to +125°C
  • Space Saving DPW package (0.8-mm × 0.8-mm)
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The TPD4E101 device is a four-channel electrostatic discharge (ESD) transient voltage suppression (TVS) diode array in an ultra small 0.8-mm × 0.8-mm package. This TVS protection device offers ±15-kV contact ESD, ±15-kV IEC air-gap protection, and has four back-to-back TVS diodes for bipolar or bidirectional signal support. The 4.8-pF typical line capacitance of this ESD protection diode array is suitable for a wide range of applications supporting data rates up to 700 Mbps. The DPW package is convenient for component placement in space-constrained applications and the 0.48-mm pitch helps save on PCB manufacturing costs.

Typical applications of this ESD protection device are circuit protection for SIM cards, audio lines (microphones, earphones, and speakerphones), SD interfaces and pushbuttons. This ESD clamp is good for providing protection in end-equipment like cell phones, portable media players, wearables, set-top boxes, and eBooks.

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Technical documentation

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Type Title Date
* Datasheet TPD4E101 4-Channel Bidirectional Low Capacitance ESD Protection Device with 15-kV Contact and Ultra-Low Clamping Voltage datasheet (Rev. E) Apr. 01, 2016
User guides Generic ESD Evaluation Module User's Guide Apr. 03, 2018
White papers Designing USB for short-to-battery tolerance in automotive environments Feb. 10, 2016
Application notes ESD Layout Guide Mar. 04, 2015
Application notes Design Considerations for System-Level ESD Circuit Protection Sep. 25, 2012
User guides ESD PROTECTION DIODES EVM Mar. 26, 2012
Application notes Reading and Understanding an ESD Protection Datasheet May 19, 2010

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

document-generic User guide
Texas Instrument's ESDEVM evaluation module allows the evaluation of most of TI's ESD portfolio. The board comes with all traditional ESD footprints in order to be able to test any number of devices. Devices that need to be tested can be soldered onto their respect footprint and then tested. For the (...)
  • Allows testing of most TI ESD devices
  • Many footprints to allow testing of each part
  • S-parameter testing for signal integrity

Design tools & simulation

SLVM598.ZIP (3 KB) - IBIS Model
SPICE-based analog simulation program
TINA-TI TINA-TI provides all the conventional DC, transient and frequency domain analysis of SPICE and much more. TINA has extensive post-processing capability that allows you to format results the way you want them. Virtual instruments allow you to select input waveforms and probe circuit nodes voltages (...)
document-generic User guide

CAD/CAE symbols

Package Pins Download
X2SON (DPW) 4 View options

Ordering & quality

Support & training

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Design Considerations for system-level ESD protection

Roger Liang, a systems engineer at Texas Instruments, explains what Electrostatic Discharge (ESD) is, and how it can occur and cause damage to our electronics.

Posted: 01-Feb-2013
Duration: 01:45

Read the full article

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