DRV8305-Q1

AKTIV

Intelligenter 12-V-Batterie-3-Phasen-Gate-Treiber (Grad 0 und Grad 1)

Produktdetails

Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 4.4 Vs ABS (max) (V) 45 Features Current sense Amplifier, LDO, SPI/I2C, Smart Gate Drive, Watchdog timer Operating temperature range (°C) -40 to 150
Rating Automotive Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 4.4 Vs ABS (max) (V) 45 Features Current sense Amplifier, LDO, SPI/I2C, Smart Gate Drive, Watchdog timer Operating temperature range (°C) -40 to 150
HTQFP (PHP) 48 81 mm² 9 x 9
  • AEC-Q100 qualified for automotive applications
  • Ambient operating temperature ranges:
    • Temperature grade 0 (E): –40°C to +150°C
    • Temperature grade 1 (Q): –40°C to +125°C
  • 4.4-V to 45-V operating voltage
  • 1.25-A and 1-A Peak gate drive currents
  • Smart gate drive architecture (IDRIVE & TDRIVE)
  • Programmable high- and low-side slew-rate control
  • Charge-pump gate driver for 100% duty cycle
  • Three integrated current-shunt amplifiers
  • Integrated 50-mA LDO (3.3-V and 5-V option)
  • 3-PWM or 6-PWM input control up to 200 kHz
  • Single PWM-mode commutation capability
  • Serial Peripheral Interface (SPI) for device settings and fault reporting
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Fault diagnostics and MCU watchdog
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-driver fault detection
    • Reverse battery-protection support
    • Limp home-mode support
    • Overtemperature warning and shutdown
  • AEC-Q100 qualified for automotive applications
  • Ambient operating temperature ranges:
    • Temperature grade 0 (E): –40°C to +150°C
    • Temperature grade 1 (Q): –40°C to +125°C
  • 4.4-V to 45-V operating voltage
  • 1.25-A and 1-A Peak gate drive currents
  • Smart gate drive architecture (IDRIVE & TDRIVE)
  • Programmable high- and low-side slew-rate control
  • Charge-pump gate driver for 100% duty cycle
  • Three integrated current-shunt amplifiers
  • Integrated 50-mA LDO (3.3-V and 5-V option)
  • 3-PWM or 6-PWM input control up to 200 kHz
  • Single PWM-mode commutation capability
  • Serial Peripheral Interface (SPI) for device settings and fault reporting
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Fault diagnostics and MCU watchdog
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-driver fault detection
    • Reverse battery-protection support
    • Limp home-mode support
    • Overtemperature warning and shutdown

The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.

The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.

The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.

The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS of both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.

Device Options:

  • DRV8305NQ: Grade 1 with voltage reference
  • DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO
  • DRV83055Q: Grade 1 with 5-V, 50-mA LDO
  • DRV8305NE: Grade 0 with voltage reference

The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.

The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.

The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.

The gate driver uses automatic handshaking when switching to prevent current shoot through. The VDS of both the high-side and low-side MOSFETs is accurately sensed to protect the external MOSFETs from overcurrent conditions. The SPI provides detailed fault reporting, diagnostics, and device configurations such as gain options for the current shunt amplifier, individual MOSFET overcurrent detection, and gate-drive slew-rate control.

Device Options:

  • DRV8305NQ: Grade 1 with voltage reference
  • DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO
  • DRV83055Q: Grade 1 with 5-V, 50-mA LDO
  • DRV8305NE: Grade 0 with voltage reference

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Technische Dokumentation

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Typ Titel Datum
* Data sheet DRV8305-Q1 Three-Phase Automotive Smart Gate Driver With Three Integrated Current Shunt Amplifiers and Voltage Regulator datasheet (Rev. D) PDF | HTML 19 Jul 2019
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 14 Okt 2021
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 22 Jun 2021
Application note Understanding Smart Gate Drive (Rev. D) 01 Mär 2021
Application brief Low Voltage Motor Drive Operation With Smart Gate Drive 20 Dez 2018
Application brief Designing High-Side and 3-Phase Isolator MOSFET Circuits in Motor Apps 09 Mai 2018
Application note Dual Motor Ctl Using FCL and Perf Analysis Using SFRA on TMS320F28379D LaunchPad (Rev. A) 20 Mär 2018
Application note Performance Analysis of Fast Current Loop (FCL) in Servo 06 Mär 2018
Technical article Six weird ways to design with a brushless-DC driver PDF | HTML 28 Aug 2017
Technical article Why are you still driving automotive motors with relays? PDF | HTML 13 Jul 2017
Technical article The power to innovate industrial design PDF | HTML 27 Mär 2017
Technical article The other motors in electric vehicle systems (part 4) PDF | HTML 17 Nov 2016
Technical article The other motors in electric vehicle systems (part 3) PDF | HTML 31 Okt 2016
Technical article The other motors in electric vehicle systems (part 2) PDF | HTML 17 Okt 2016
Technical article How motor drivers aid in an automobile’s “limp-home” mode PDF | HTML 06 Okt 2016
Application note Sensored 3-Phase BLDC Motor Control Using MSP430 20 Jul 2011

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

BOOSTXL-DRV8305EVM — DRV8305N – 3-Phasen-Motortreiber auf BoosterPack – Evaluierungsmodul

The BOOSTXL-DRV8305EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8305 motor gate driver and CSD18540Q5B NexFET™ power MOSFET. The module has individual DC bus and phase voltage sense as well as individual low-side current shunt sense for sensorless BLDC algorithms. The module (...)

Benutzerhandbuch: PDF
Evaluierungsplatine

DRV8305-Q1EVM — DRV8305-Q1 – Gate-Treiber für die Automobilindustrie zur Ansteuerung eines 3-Phasen-Motors – Evaluie

The DRV8305-Q1EVM evaluation module (EVM) is a 4.4 V to 45 V, 25 A, 3-phase motor drive and control system based on the DRV8305-Q1 automotive motor gate driver, TMS320F28027 motor control microcontroller, and CSD18540Q5B NexFET™ power MOSFET. The EVM allows for simple evaluation of the (...)

Benutzerhandbuch: PDF
Referenzdesigns

TIDA-00901 — 12 V, 200 W (20 A) BLDC-Motorantrieb für die Automobilindustrie – Referenzdesign

This is a three-phase brushless DC motor drive designed to operate in 12-V automotive applications such as HVAC blowers. This reference design drives motors in the 200-W range and can handle currents up to 20 A. Utilizing either sensorless operation or external hall-effect sensors, the (...)
Design guide: PDF
Schaltplan: PDF
Referenzdesigns

TIDA-01330 — 2-Achsen-Sitz mit bürstenbehaftetem DC-Motorantriebfür die Automobilindustrie – Referenzdesign

The TIDA-01330 reference design implements the drive circuits for two independent brushed DC motors. It provides a solution for automotive power seats with a highly integrated 2-axis driver, reducing the overall bill of materials. The interface to a simple microcontroller Illustrates how the (...)
Design guide: PDF
Schaltplan: PDF
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
HTQFP (PHP) 48 Ultra Librarian

Bestellen & Qualität

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  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort

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